Hot carrier aging degradation phenomena in GaN based MESFETs. - Fabiana Rampazzo; Roberto Pierobon; D. Pacetta; Christophe Gaquière; Didier Théron; Bertrand Boudart; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2004)

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. - Tetsuya Suemitsu; Yoshino K. Fukai; Masami Tokumitsu; Fabiana Rampazzo; Gaudenzio Meneghesso; Enrico Zanoni (IEICE Electron. Express, 2006)

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors. - Francesca Danesin; Franco Zanon; Simone Gerardin; Fabiana Rampazzo; Gaudenzio Meneghesso; Enrico Zanoni; Alessandro Paccagnella (Microelectron. Reliab., 2006)

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. - Mustapha Faqir; Giovanni Verzellesi; Fausto Fantini; Francesca Danesin; Fabiana Rampazzo; Gaudenzio Meneghesso; Enrico Zanoni; Anna Cavallini; Antonio Castaldini; Nathalie Labat; André Touboul; Christian Dua (Microelectron. Reliab., 2007)

Single- and double-heterostructure GaN-HEMTs devices for power switching applications. - Alberto Zanandrea; Eldad Bahat-Treidel; Fabiana Rampazzo; Antonio Stocco; Matteo Meneghini; Enrico Zanoni; Oliver Hilt; Ponky Ivo; Joachim Würfl; Gaudenzio Meneghesso (Microelectron. Reliab., 2012)

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. - Isabella Rossetto; Fabiana Rampazzo; Riccardo Silvestri; Alberto Zanandrea; Christian Dua; Sylvain L. Delage; Mourad Oualli; Matteo Meneghini; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2013)

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. - Davide Bisi; Antonio Stocco; Matteo Meneghini; Fabiana Rampazzo; Andrea Cester; Gaudenzio Meneghesso; Enrico Zanoni (ESSDERC, 2014)

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. - Isabella Rossetto; Fabiana Rampazzo; Simone Gerardin; Matteo Meneghini; Marta Bagatin; Alberto Zanandrea; Alessandro Paccagnella; Gaudenzio Meneghesso; Enrico Zanoni; Christian Dua; Marie-Antoinette di Forte-Poisson; Raphael Aubry; et al. (ESSDERC, 2014)

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. - Isabella Rossetto; Fabiana Rampazzo; Matteo Meneghini; Marco Silvestri; Christian Dua; Piero Gamarra; Raphael Aubry; Marie-Antoinette di Forte-Poisson; O. Patard; Sylvain L. Delage; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2014)

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. - Antonio Stocco; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Proton induced trapping effect on space compatible GaN HEMTs. - Antonio Stocco; Simone Gerardin; Davide Bisi; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. - Davide Bisi; Antonio Stocco; Isabella Rossetto; Matteo Meneghini; Fabiana Rampazzo; Alessandro Chini; Fabio Soci; Alessio Pantellini; Claudio Lanzieri; Piero Gamarra; Cedric Lacam; M. Tordjman; et al. (Microelectron. Reliab., 2015)

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. - Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Fabiana Rampazzo; Daniele Marcon; Veronica Gao Zhan; Francesca Chiocchetta; Andreas Graff; Frank Altmann; Michél Simon-Najasek; David Poppitz (IRPS, 2020)

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. - Francesca Chiocchetta; Claudia Calascione; Carlo De Santi; Chandan Sharma; Fabiana Rampazzo; Xun Zheng; Brian Romanczyk; Matthew Guidry; Haoran Li; Stacia Keller; Umesh K. Mishra; Gaudenzio Meneghesso; et al. (IRPS, 2021)

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. - Francesca Chiocchetta; Carlo De Santi; Fabiana Rampazzo; Kalparupa Mukherjee; Jan Grünenpütt; Daniel Sommer; Hervé Blanck; Benoit Lambert; Andrea Gerosa; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. - Zhan Gao; Francesca Chiocchetta; Carlo De Santi; Nicola Modolo; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Hervé Blanck; H. Stieglauer; D. Sommer; Benoit Lambert; et al. (IRPS, 2022)

Thermally-activated failure mechanisms of 0.25 mu mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests. - Zhan Gao; Francesca Chiocchetta; Fabiana Rampazzo; Carlo De Santi; Mirko Fornasier; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni (IRPS, 2023)

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. - Marco Saro; Francesco de Pieri; Andrea Carlotto; Mirko Fornasier; Fabiana Rampazzo; Carlo De Santi; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni; Davide Bisi; Matthew Guidry; Stacia Keller; et al. (IRPS, 2024)

Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $ mu mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications. - Francesco de Pieri; Manuel Fregolent; Marco Saro; Andrea Carlotto; Mirco Boito; Carlo De Santi; Fabiana Rampazzo; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni (IRPS, 2025)