PVT variability analysis of FinFET and CMOS XOR circuits at 16nm. - Fábio G. R. G. da Silva; Paulo F. Butzen; Cristina Meinhardt (ICECS, 2016)

Impact of Near-Threshold and Variability on 7nm FinFET XOR Circuits. - Fabio G. Rossato G. da Silva; Cristina Meinhardt; Ricardo Reis 001 (ICECS, 2018)

Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. - Roberto B. Almeida; Cleiton Magano Marques; Paulo F. Butzen; Fábio G. R. G. da Silva; Ricardo A. L. Reis; Cristina Meinhardt (Microelectron. Reliab., 2018)

FinFET Variability and Near-threshold operation: Impact on Full Adders design using XOR Blocks. - Fabio G. Rossato G. da Silva; Cristina Meinhardt; Ricardo Augusto da Luz Reis (ICECS, 2019)

Mirror Full Adder SET Susceptibility on 7nm FinFET Technology. - Rafael N. M. Oliveira; Fábio G. R. G. da Silva; Ricardo Reis 001; Cristina Meinhardt (ICECS, 2020)

Mitigation Effects of Decoupling Cells on Full Adders Process Variability. - Fabio G. Rossato G. da Silva; Cristina Meinhardt; Ricardo Reis 001 (MWSCAS, 2020)

SET Mitigation Techniques on Mirror Full Adder at 7 nm FinFET Technology. - Rafael N. M. Oliveira; Fábio G. R. G. da Silva; Ricardo Reis 001; Cristina Meinhardt (LATS, 2021)

Improving Soft Error Robustness of Full Adder Circuits with Decoupling Cell and Transistor Sizing. - Rafael N. M. Oliveira; Fábio G. R. G. da Silva; Ricardo Reis 001; Rafael B. Schvittz; Cristina Meinhardt (SBCCI, 2022)

Exploring XOR-based Full Adders and decoupling cells to variability mitigation at FinFET technology. - Fábio G. R. G. da Silva; Rafael N. M. Oliveira; Alexandra L. Zimpeck; Cristina Meinhardt; Ricardo Reis 001 (Integr., 2022)