µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. - Eleonora Canato; Fabrizio Masin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Arno Stockman; Abhishek Banerjee 003; Peter Moens (IRPS, 2019)

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. - Fabrizio Masin; Matteo Meneghini; Eleonora Canato; Alessandro Barbato; Carlo De Santi; Arno Stockman; Abhishek Banerjee 003; Peter Moens; Enrico Zanoni; Gaudenzio Meneghesso (IRPS, 2020)

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. - Fabrizio Masin; Carlo De Santi; Arno Stockman; J. Lettens; F. Geenen; Gaudenzio Meneghesso; Enrico Zanoni; Peter Moens; Matteo Meneghini (IRPS, 2022)