Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism. - Jianjun Chen; Shuming Chen; Bin Liang; Biwei Liu; Fanyu Liu (Microelectron. Reliab., 2012)

Back-gate effects and detailed characterization of junctionless transistor. - Mukta Singh Parihar; Fanyu Liu; Carlos Navarro; Sylvain Barraud; Maryline Bawedin; Irina Ionica; Abhinav Kranti; Sorin Cristoloveanu (ESSDERC, 2015)

Nano-scaled transistor reliability characterization at nano-second regime. - Ran Cheng; Ying Sun; Yiming Qu; Wei Liu; Fanyu Liu; Jianfeng Gao 005; Nuo Xu; Bing Chen (Sci. China Inf. Sci., 2021)

The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology. - Xu Zhang; Fanyu Liu; Bo Li 051; Siyuan Chen; Yang Huang 002; Jiangjiang Li; Jian Jiao; Tianchun Ye 001; Jiajun Luo (APCCAS, 2022)

Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology. - Junjun Zhang; Fanyu Liu; Bo Li 051; Yang Huang 002; Siyuan Chen; Yuchong Wang; Jiajun Luo; Jing Wan (IRPS, 2022)

The Effects of $ gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology. - Yuchong Wang; Siyuan Chen; Fanyu Liu; Bo Li 051; Jiangjiang Li; Yang Huang 002; Tiexin Zhang; Xu Zhang; Zhengsheng Han; Tianchun Ye 001; Jing Wan (IRPS, 2023)

On the Ion Line Calibration by Plasma Line in ISR Measurements. - Xinan Yue; Fanyu Liu; Junyi Wang 004; Yonghui Wang; Yihui Cai; Feng Ding 013; Baiqi Ning; Mingyuan Li 001; Ning Zhang; Zhongqiu Wang; Su Xu (Remote. Sens., 2023)

Research on the Latch-Up Mechanism of DSOI at High Temperature. - Yuchen Wu; Fanyu Liu; Bo Li; Jiangjiang Li; Siyuan Chen; Yang Huang; Jiamin Li; Tiexin Zhang; Jing Wan; Yong Xu (IRPS, 2024)

A Novel NH3 Sensing Mechanism Based on Au Pads Activated Schottky Barrier MOSFET on Silicon-on-Insulator With Extremely High Sensitivity at Room Temperature. - Kai Xiao; Haihua Wang; Hui Xie; Siyuan Li; Zekun Zhao; Ziyue Cui; Qiumeng Chen; Peng Zhou 021; Fanyu Liu; Yong Xu; Yu-Long Jiang; Jing Wan (IEEE Trans. Instrum. Meas., 2024)

An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap. - Tiexin Zhang; Fanyu Liu; Lei Shu; Siyuan Chen; Yuchong Wang; Yuchen Wu; Jing Wan; Yong Xu; Shi Li 001; Yuyang Ding; Bo Li 051; Zhengsheng Han; et al. (IEEE Access, 2025)

Radiation Dose Detector of γ-Ray Based on Transient Nonequilibrium Body Potential Under Pseudo-MOSFET Configuration. - Tiexin Zhang; Fanyu Liu; Lei Shu; Siyuan Chen; Yuchong Wang; Yuchen Wu; Jing Wan; Yong Xu; Shi Li 001; Yuyang Ding; Bo Li 051; Zhengsheng Han; et al. (IEEE Trans. Instrum. Meas., 2025)