High performance high reliability AlN/GaN DHFET. - Farid Medjdoub; Etienne Okada; Bertrand Grimbert; Damien Ducatteau; Riccardo Silvestri; Matteo Meneghini; Enrico Zanoni; Gaudenzio Meneghesso (ESSDERC, 2014)

Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness. - R. Pecheux; R. Kabouche; E. Dogmus; A. Linge; Etienne Okada; M. Zegaoui; Farid Medjdoub (ESSDERC, 2017)

Short-term reliability of high performance Q-band AlN/GaN HEMTs. - Riad Kabouche; Kathia Harrouche; Etienne Okada; Farid Medjdoub (IRPS, 2020)

Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs. - Ajay Shanbhag; Sruthi M. P; Farid Medjdoub; Anjan Chakravorty; Nandita DasGupta; Amitava DasGupta (BCICTS, 2021)

Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. - N. Said; Kathia Harrouche; Farid Medjdoub; Nathalie Labat; Jean-Guy Tartarin; Nathalie Malbert (IRPS, 2023)

Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs. - Lyes Ben Hammou; François Grandpierron; Elodie Carneiro; Katir Ziouche; Etienne Okada; Farid Medjdoub; Gilles Patriarche (IRPS, 2025)