Improved RF CMOS active inductor with high self resonant frequency. - Cristian Andriesei; Liviu Goras; Farid Temcamani; Bruno Delacressonniere (ICECS, 2010)

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. - Jean-Baptiste Fonder; Laetitia Chevalier; Cédric Genevois; Olivier Latry; Cedric Duperrier; Farid Temcamani; Hichame Maanane (Microelectron. Reliab., 2012)

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life. - Jean-Baptiste Fonder; Olivier Latry; Cedric Duperrier; M. Stanislawiak; Hichame Maanane; Philippe Eudeline; Farid Temcamani (Microelectron. Reliab., 2012)

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization. - Jean-Baptiste Fonder; Olivier Latry; Farid Temcamani; Cedric Duperrier (ICMCS, 2014)

Low power agile active filter with digitally controlled center-frequency. - Rami Rami; Mustapha Alami; Farid Temcamani; Yahya Lakys; Bruno Delacressonniere; Moulhime El Bekkali (ICMCS, 2014)

A novel high bandwidth current mode instrumentation amplifier. - Zineb M'Harzi; Mustapha Alami; Farid Temcamani (ICM, 2015)

An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. - Alexis Divay; Mohamed Masmoudi; Olivier Latry; Cedric Duperrier; Farid Temcamani (Microelectron. Reliab., 2015)

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. - Alexis Divay; Cedric Duperrier; Farid Temcamani; Olivier Latry (Microelectron. Reliab., 2016)

Novel current-controlled negative resistance based on simplified negative current-controlled conveyors. - Zineb M'Harzi; Mustapha Alami; Farid Temcamani (ATSIP, 2017)