Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications. - K. Ben Ali; P. M. Gammon; C. W. Chan; F. Li; V. Pathirana; T. Trajkovic; Farzan Gity; Denis Flandre; Valeria Kilchytska (ESSDERC, 2017)

Impact of impurities, interface traps and contacts on MoS2 MOSFETs: Modelling and experiments. - Gioele Mirabelli; Farzan Gity; Scott Monaghan; Paul K. Hurley; Ray Duffy (ESSDERC, 2017)