Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design. - Erfan Abbasian; Morteza Gholipour; Farzaneh Izadinasab (Int. J. Circuit Theory Appl., 2021)

Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology. - Farzaneh Izadinasab; Morteza Gholipour (Microelectron. J., 2021)

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins. - Erfan Abbasian; Farzaneh Izadinasab; Morteza Gholipour (IEEE Trans. Circuits Syst. I Regul. Pap., 2022)