Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula. - Fatimah Arofiati Noor; Ibnu Syuhada; Toto Winata; Feng Yu 009; Muhammad Fahlesa Fatahilah; Hutomo Suryo Wasisto; Khairurrijal Khairurrijal (IEEE Access, 2021)

Comprehensive Analytical Model for Exploring the Dominant Scattering Mechanism of Two-Dimensional MoS2 FETs. - Fatimah Arofiati Noor; Ibnu Syuhada; Toto Winata; Khairurrijal Khairurrijal (IEEE Access, 2024)