High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology. - Axel Tessmann; Arnulf Leuther; Felix Heinz; Frank Bernhardt; Hermann Massler (BCICTS, 2018)

20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon. - Axel Tessmann; Arnulf Leuther; Felix Heinz; Frank Bernhardt; Laurenz John; Hermann Massler; Lukas Czornomaz; Thomas Merkle (IEEE J. Solid State Circuits, 2019)

Ultra-Low-Noise 50-nm InGaAs mHEMT Technology and MMICs for Room Temperature and Cryogenic Applications. - Fabian Thome; Laurenz John; Rainer Weber; Felix Heinz; Hermann Massler; Arnulf Leuther; Sébastien Chartier (IGARSS, 2023)