Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing. - Chia-Wei Hsu; Yean-Kuen Fang; Wen-Kuan Yeh; Chun-Yu Chen; Yen-Ting Chiang; Feng-Renn Juang; Chien-Ting Lin; Chieh-Ming Lai (Microelectron. Reliab., 2010)

Dependence of the Au/SnOx/n-LTPS/glass thin film MOS Schottky diode CO gas sensing performances on operating temperature. - Feng-Renn Juang; Yean-Kuen Fang; Hung-Yu Chiu (Microelectron. Reliab., 2012)

A novel method to improve cell endurance window in source-side injection split gate flash memory. - Yong-Shiuan Tsair; Yean-Kuen Fang; Feng-Renn Juang; Yu-Hsiung Wang; Wen-Ting Chu; Yung-Tao Lin; Luan Tran (Microelectron. Reliab., 2012)