A novel GaN HEMT degradation mechanism observed during HTST test. - Ferdinando Iucolano; Antonino Maurizio Parisi; Santo Reina; Alessandro Chini (IRPS, 2018)

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Romain Gwoziecki; A. Torres; Marc Plissonnier; Fred Gaillard; Gérard Ghibaudo; Roberto Modica; Ferdinando Iucolano; Matteo Meneghini; Gaudenzio Meneghesso (IRPS, 2019)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. - B. Rrustemi; Aby-Gaël Viey; Marie-Anne Jaud; François Triozon; William Vandendaele; Charles Leroux; Jacques Cluzel; S. Martin; Cyrille Le Royer; Romain Gwoziecki; Roberto Modica; Ferdinando Iucolano; et al. (ESSDERC, 2021)

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Jean Coignus; Jacques Cluzel; Alexis Krakovinsky; Simon Martin 006; Jérome Biscarrat; Romain Gwoziecki; Veronique Sousa; Fred Gaillard; Roberto Modica; et al. (IRPS, 2021)

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. - Camille Leurquin; William Vandendaele; Aby-Gaël Viey; Romain Gwoziecki; René Escoffier; R. Salot; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2022)

Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs. - Marcello Cioni; G. Giorgino; Alessandro Chini; Carmine Miccoli; Maria Eloisa Castagna; M. Moschetti; C. Tringali; Ferdinando Iucolano (IRPS, 2023)

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs. - Camille Leurquin; William Vandendaele; Romain Gwoziecki; B. Mohamad; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2023)

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). - William Vandendaele; Camille Leurquin; R. Lavieville; Marie-Anne Jaud; Abygaël Viey; Romain Gwoziecki; B. Mohamad; Etienne Nowak; Aurore Constant; Ferdinando Iucolano (IRPS, 2023)

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach. - Mirco Boito; Manuel Fregolent; Carlo De Santi; A. Abbisogni; S. Smerzi; Isabella Rossetto; Ferdinando Iucolano; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate. - Riccardo Fraccaroli; Matteo Dell'Andrea; Manuel Fregolent; Mirco Boito; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Eleonora Canato; Isabella Rossetto; Alessio Pirani; Giansalvo Pizzo; Cristina Miccoli; et al. (IRPS, 2025)