Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells. - Guillaume Hubert; Antonin Bougerol; Florent Miller; Nadine Buard; Lorena Anghel; Thierry Carrière; Frederic Wrobel; Rémi Gaillard (IOLTS, 2006)

Latchup effect in CMOS IC: a solution for crypto-processors protection against fault injection attacks? - Nadine Buard; Florent Miller; Cédric Ruby; Rémi Gaillard (IOLTS, 2007)

SDRAM Architecture & Single Event Effects Revealed with Laser. - Antonin Bougerol; Florent Miller; Nadine Buard (IOLTS, 2008)

Novel DRAM mitigation technique. - Antonin Bougerol; Florent Miller; Nadine Buard (IOLTS, 2009)

Test methodology of a new upset mechanism induced by protons in deep sub-micron devices. - Cécile Weulersse; Florent Miller; Dan Alexandrescu; Erwin Schaefer; Olivier Crépel; Rémi Gaillard (Microelectron. Reliab., 2012)

Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment. - Thomas Santini; Sébastien Morand; Mitra Fouladirad; Luong-Viêt Phung; Florent Miller; Bruno Foucher; Antoine Grall; Bruno Allard (Microelectron. Reliab., 2014)

Prediction of proton cross sections for SEU in SRAMs and SDRAMs using the METIS engineer tool. - Cécile Weulersse; Florent Miller; Thierry Carrière; R. Mangeret (Microelectron. Reliab., 2015)

Non-homogenous gamma process: Application to SiC MOSFET threshold voltage instability. - Thomas Santini; Sébastien Morand; Mitra Fouladirad; Florent Miller; Antoine Grall; Bruno Allard (Microelectron. Reliab., 2017)

Using Application Profiling based on a Virtual Platform for SoC Fault Tolerance Assessment. - Luc Noizette; Florent Miller; Thierry Colladant; Youri Helen; Régis Leveugle (PRIME, 2022)

Using High-Level Profiling Data to Early Assess the Robustness of Digital Systems. - Luc Noizette; Florent Miller; Youri Helen; Régis Leveugle (DFT, 2024)