Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures. - Mahmoud Mehrabankhomartash; Shiyuan Yin; Alfonso J. Cruz; Lukas Graber; Maryam Saeedifard; Simon Evans; Florian Kapaun; Ivan Revel; Gerhard Steiner; Ludovic Ybanez; Chanyeop Park (IECON, 2021)