Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. - Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Fabiana Rampazzo; Daniele Marcon; Veronica Gao Zhan; Francesca Chiocchetta; Andreas Graff; Frank Altmann; Michél Simon-Najasek; David Poppitz (IRPS, 2020)

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. - Francesca Chiocchetta; Claudia Calascione; Carlo De Santi; Chandan Sharma; Fabiana Rampazzo; Xun Zheng; Brian Romanczyk; Matthew Guidry; Haoran Li; Stacia Keller; Umesh K. Mishra; Gaudenzio Meneghesso; et al. (IRPS, 2021)

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. - Francesca Chiocchetta; Carlo De Santi; Fabiana Rampazzo; Kalparupa Mukherjee; Jan Grünenpütt; Daniel Sommer; Hervé Blanck; Benoit Lambert; Andrea Gerosa; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. - Zhan Gao; Francesca Chiocchetta; Carlo De Santi; Nicola Modolo; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Hervé Blanck; H. Stieglauer; D. Sommer; Benoit Lambert; et al. (IRPS, 2022)

Thermally-activated failure mechanisms of 0.25 mu mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests. - Zhan Gao; Francesca Chiocchetta; Fabiana Rampazzo; Carlo De Santi; Mirko Fornasier; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni (IRPS, 2023)