Performance analysis and reliability characterization of non volatile memory cells with high efficiency. - Francesco Driussi (2006)

Graphene base transistors with optimized emitter and dielectrics. - Stefano Venica; Francesco Driussi; Pierpaolo Palestri; Luca Selmi (MIPRO, 2014)

State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors. - Pierpaolo Palestri; Enrico Caruso; Francesco Driussi; David Esseni; Daniel Lizzit; Patrik Osgnach; Stefano Venica; Luca Selmi (MIPRO, 2015)

Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions. - Riccardo Fontanini; Justine Barbot; Mattia Segatto; Suzanne Lancaster; Quang T. Duong; Francesco Driussi; Laurent Grenouillet; François Triozon; Jean Coignus; Thomas Mikolajick; Stefan Slesazeck; David Esseni (ESSDERC, 2021)

Modelling and design of FTJs as high reading-impedance synaptic devices. - Riccardo Fontanini; Marco Massarotto; Ruben Specogna; Francesco Driussi; Mirko Loghi; David Esseni (CoRR, 2021)

Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies. - David Esseni; Riccardo Fontanini; Daniel Lizzit; Marco Massarotto; Francesco Driussi; Mirko Loghi (CoRR, 2021)

Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions. - Mattia Segatto; Marco Massarotto; Suzanne Lancaster; Quang T. Duong; Antonio Affanni; Riccardo Fontanini; Francesco Driussi; Daniel Lizzit; Thomas Mikolajick; Stefan Slesazeck; David Esseni (ESSDERC, 2022)

Synchrotron Radiation Study of Gain, Noise, and Collection Efficiency of GaAs SAM-APDs with Staircase Structure. - Matija Colja; Marco Cautero; Ralf-Hendrik Menk; Pierpaolo Palestri; Alessandra Gianoncelli; Matias Antonelli; Giorgio Biasiol; Simone Dal Zilio; Tereza Steinhartova; Camilla Nichetti; Fulvia Arfelli; Dario De Angelis; et al. (Sensors, 2022)

Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes. - Suzanne Lancaster; Mattia Segatto; Cláudia Silva; Benjamin Max; Thomas Mikolajick; David Esseni; Francesco Driussi; Stefan Slesazeck (DRC, 2023)

Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices. - David Esseni; Francesco Driussi; Daniel Lizzit; Marco Massarotto; Mattia Segatto (CoRR, 2023)