Non-destructive tester for single event burnout of power diodes. - Giovanni Busatto; Francesco Iannuzzo; Francesco Velardi; Jeffery Wyss (Microelectron. Reliab., 2001)

Non-destructive high temperature characterisation of high-voltage IGBTs. - Giovanni Busatto; B. Cascone; Luigi Fratelli; M. Balsamo; Francesco Iannuzzo; Francesco Velardi (Microelectron. Reliab., 2002)

The Reliability of New Generation Power MOSFETs in Radiation Environment. - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Jeffery Wyss; A. Kaminksy (Microelectron. Reliab., 2002)

MAGFET based current sensing for power integrated circuit. - Giovanni Busatto; Roberto La Capruccia; Francesco Iannuzzo; Francesco Velardi; Roberto Roncella (Microelectron. Reliab., 2003)

Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. - Giovanni Busatto; Francesco Iannuzzo; Francesco Velardi; M. Valentino; Giampiero Pepe (Microelectron. Reliab., 2003)

Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, . - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Jeffery Wyss; A. Candelori (Microelectron. Reliab., 2003)

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Jeffery Wyss; Annunziata Sanseverino; A. Candelori; Giuseppe Currò; Alessandra Cascio; Ferruccio Frisina (Microelectron. Reliab., 2003)

Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications. - Giovanni Busatto; Luigi Fratelli; Carmine Abbate; Roberta Manzo; Francesco Iannuzzo (Microelectron. Reliab., 2004)

The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Alberto Porzio; Annunziata Sanseverino; Giuseppe Currò; Alessandra Cascio; Ferruccio Frisina (Microelectron. Reliab., 2004)

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. - Giovanni Busatto; Alberto Porzio; Francesco Velardi; Francesco Iannuzzo; Annunziata Sanseverino; Giuseppe Currò (Microelectron. Reliab., 2005)

Non-destructive Testing Technique for MOSFET's Characterisation during Soft-Switching ZVS Operations. - Francesco Iannuzzo (Microelectron. Reliab., 2005)

The high frequency behaviour of high voltage and current IGBT modules. - Carmine Abbate; Giovanni Busatto; Luigi Fratelli; Francesco Iannuzzo (Microelectron. Reliab., 2006)

Experimental study of power MOSFET's gate damage in radiation environment. - Giovanni Busatto; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi; Giuseppe Currò (Microelectron. Reliab., 2006)

Investigation of MOSFET failure in soft-switching conditions. - Francesco Iannuzzo; Giovanni Busatto; Carmine Abbate (Microelectron. Reliab., 2006)

The robustness of series-connected high power IGBT modules. - Carmine Abbate; Giovanni Busatto; Luigi Fratelli; Francesco Iannuzzo; B. Cascone; Roberta Manzo (Microelectron. Reliab., 2007)

IGBT modules robustness during turn-off commutation. - Giovanni Busatto; Carmine Abbate; B. Abbate; Francesco Iannuzzo (Microelectron. Reliab., 2008)

Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2008)

High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs. - Francesco Iannuzzo (Microelectron. Reliab., 2008)

Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs. - Francesco Iannuzzo (IEEE Trans. Ind. Electron., 2008)

Instable mechanisms during unclamped operation of high power IGBT modules. - Giovanni Busatto; Carmine Abbate; Francesco Iannuzzo; P. Cristofaro (Microelectron. Reliab., 2009)

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2009)

IGBT RBSOA non-destructive testing methods: Analysis and discussion. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo (Microelectron. Reliab., 2010)

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2010)

Editorial. - Giovanni Busatto; Francesco Iannuzzo (Microelectron. Reliab., 2010)

Operation of SiC normally-off JFET at the edges of its safe operating area. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo (Microelectron. Reliab., 2011)

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. - Giovanni Busatto; D. Bisello; Giuseppe Currò; Piero Giubilato; Francesco Iannuzzo; S. Mattiazzo; D. Pantano; Annunziata Sanseverino; Luca Silvestrin; M. Tessaro; Francesco Velardi; Jeffery Wyss (Microelectron. Reliab., 2011)

Unclamped repetitive stress on 1200 V normally-off SiC JFETs. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo (Microelectron. Reliab., 2012)

Reliability oriented design of power supplies for high energy physics applications. - Stefania Baccaro; Giovanni Busatto; Mauro Citterio; Paolo Cova; Nicola Delmonte; Francesco Iannuzzo; Agostino Lanza; Marco Riva; Annunziata Sanseverino; Giorgio Spiazzi (Microelectron. Reliab., 2012)

Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. - Giovanni Busatto; Valentina De Luca; Francesco Iannuzzo; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2012)

Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview. - Rui Wu; Frede Blaabjerg; Huai Wang; Marco Liserre; Francesco Iannuzzo (IECON, 2013)

Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo; Cesare Ronsisvalle; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2013)

Thermal instability during short circuit of normally-off AlGaN/GaN HFETs. - Carmine Abbate; Francesco Iannuzzo; Giovanni Busatto (Microelectron. Reliab., 2013)

Investigation on the short-circuit behavior of an aged IGBT module through a 6 kA/1.1 kV non-destructive testing equipment. - Rui Wu; Liudmila Smirnova; Francesco Iannuzzo; Huai Wang; Frede Blaabjerg (IECON, 2014)

Thermal damage in SiC Schottky diodes induced by SE heavy ions. - Carmine Abbate; Giovanni Busatto; Paolo Cova; Nicola Delmonte; Francesco Giuliani; Francesco Iannuzzo; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2014)

Turn-off instabilities in large area IGBTs. - Carmine Abbate; Francesco Iannuzzo; Giovanni Busatto; Annunziata Sanseverino; Francesco Velardi; Cesare Ronsisvalle; James Victory (Microelectron. Reliab., 2014)

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo; S. Mattiazzo; Annunziata Sanseverino; Luca Silvestrin; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2015)

Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation. - Ui-Min Choi; Frede Blaabjerg; Francesco Iannuzzo; Søren Jørgensen (Microelectron. Reliab., 2015)

Robustness of MW-Level IGBT modules against gate oscillations under short circuit events. - Paula Diaz Reigosa; Rui Wu; Francesco Iannuzzo; Frede Blaabjerg (Microelectron. Reliab., 2015)

Mission-profile-based stress analysis of bond-wires in SiC power modules. - Amir Sajjad Bahman; Francesco Iannuzzo; Frede Blaabjerg (Microelectron. Reliab., 2016)

Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations. - Ui-Min Choi; Frede Blaabjerg; Søren Jørgensen; Francesco Iannuzzo; Huai Wang; Christian Uhrenfeldt; Stig Munk-Nielsen (Microelectron. Reliab., 2016)

Reliability issues in power electronics. - Francesco Iannuzzo; Mauro Ciappa (Microelectron. Reliab., 2016)

Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview. - Haoze Luo; Francesco Iannuzzo; Paula Diaz Reigosa; Frede Blaabjerg; Wuhua Li; Xiangning He (Microelectron. Reliab., 2016)

Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT. - Paula Diaz Reigosa; Daniel Prindle; Gontran Pâques; Silvan Geissmann; Francesco Iannuzzo; Arnost Kopta; Munaf Rahimo (Microelectron. Reliab., 2016)

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions. - Lorenzo Ceccarelli; Paula Diaz Reigosa; Amir Sajjad Bahman; Francesco Iannuzzo; Frede Blaabjerg (IECON, 2017)

Separation test method for investigation of current density effects on bond wires of SiC power MOSFET modules. - Haoze Luo; Francesco Iannuzzo; Frede Blaabjerg; Wuhua Li; Xiangning He (IECON, 2017)

Active thermal control for reliability improvement of MOS-gated power devices. - Alessandro Soldati; Carlo Concari; Fabrizio Dossena; Davide Barater; Francesco Iannuzzo; Frede Blaabjerg (IECON, 2017)

Active thermal control by controlled shoot-through of power devices. - Alessandro Soldati; Francesco Iannuzzo; Frede Blaabjerg (IECON, 2017)

Reliability-oriented environmental thermal stress analysis of fuses in power electronics. - Amir Sajjad Bahman; Francesco Iannuzzo; T. Holmgaard; R. Ø. Nielsen; Frede Blaabjerg (Microelectron. Reliab., 2017)

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis. - Lorenzo Ceccarelli; Paula Diaz Reigosa; Francesco Iannuzzo; Frede Blaabjerg (Microelectron. Reliab., 2017)

Advanced power cycler with intelligent monitoring strategy of IGBT module under test. - Ui-Min Choi; Frede Blaabjerg; Francesco Iannuzzo (Microelectron. Reliab., 2017)

Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules. - Haoze Luo; Nick Baker; Francesco Iannuzzo; Frede Blaabjerg (Microelectron. Reliab., 2017)

Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design. - Haoze Luo; Wuhua Li; Xiangning He; Francesco Iannuzzo; Frede Blaabjerg (Microelectron. Reliab., 2017)

Wire bond degradation under thermo- and pure mechanical loading. - Kristian Bonderup Pedersen; Dennis A. Nielsen; Bernhard Czerny; Golta Khatibi; Francesco Iannuzzo; Vladimir N. Popok; Kjeld Pedersen (Microelectron. Reliab., 2017)

Capacitive effects in IGBTs limiting their reliability under short circuit. - Paula Diaz Reigosa; Francesco Iannuzzo; Munaf Rahimo; Frede Blaabjerg (Microelectron. Reliab., 2017)

Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions. - Mohsen Akbari; Amir Sajjad Bahman; Paula Diaz Reigosa; Francesco Iannuzzo; Mohammad Tavakoli Bina (Microelectron. Reliab., 2018)

Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses. - Amir Sajjad Bahman; Simon M. Jensen; Francesco Iannuzzo (Microelectron. Reliab., 2018)

Smart SiC MOSFET accelerated lifetime testing. - Nick Baker; Francesco Iannuzzo (Microelectron. Reliab., 2018)

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter. - Lorenzo Ceccarelli; Haoze Luo; Francesco Iannuzzo (Microelectron. Reliab., 2018)

Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings. - Ui-Min Choi; Søren Jørgensen; Francesco Iannuzzo; Frede Blaabjerg (Microelectron. Reliab., 2018)

Editorial. - Mauro Ciappa; Paolo Cova; Gaudenzio Meneghesso; Francesco Iannuzzo (Microelectron. Reliab., 2018)

Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging. - Pooya Davari; O. Kristensen; Francesco Iannuzzo (Microelectron. Reliab., 2018)

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. - H. Du; Paula Diaz Reigosa; Francesco Iannuzzo; Lorenzo Ceccarelli (Microelectron. Reliab., 2018)

Simple and effective open switch fault diagnosis of single-phase PWM rectifier. - Keting Hu; Zhigang Liu 001; Francesco Iannuzzo; Frede Blaabjerg (Microelectron. Reliab., 2018)

On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition. - Haoze Luo; Paula Diaz Reigosa; Francesco Iannuzzo; Frede Blaabjerg (Microelectron. Reliab., 2018)

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs. - Paula Diaz Reigosa; Francesco Iannuzzo; Lorenzo Ceccarelli (Microelectron. Reliab., 2018)

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules. - Haoze Luo; Wuhua Li; Francesco Iannuzzo; Xiangning He; Frede Blaabjerg (IEEE Trans. Ind. Electron., 2018)

The Temperature Dependence of the Flatband Voltage in High-Power IGBTs. - Nick Baker; Francesco Iannuzzo (IEEE Trans. Ind. Electron., 2019)

Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches. - Keting Hu; Zhigang Liu 001; Yongheng Yang; Francesco Iannuzzo; Frede Blaabjerg (IEEE Access, 2020)

Effect of Current Distortion and Unbalanced Loads on Semiconductors Reliability. - Tomàs Lledó-Ponsati; Amir Sajjad Bahman; Francesco Iannuzzo; Daniel Montesinos-Miracle; Samuel Galceran-Arellano (IEEE Access, 2021)

Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules. - Qiang Wang 031; Jingwei Zhang; Francesco Iannuzzo; Amir Sajjad Bahman; Weifeng Zhang; Fengyou He (IEEE Access, 2022)

Optimization of a Bidirectional Boost Converter for Nanogrid Applications. - Rand AL Mdanat; Sarah Saeed; Ramy Georgious; Jorge García; Francesco Iannuzzo (IAS, 2023)

Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer. - Cao Zhan; Lingyu Zhu 003; Weicheng Wang; Yaxin Zhang; Shengchang Ji; Francesco Iannuzzo (IEEE Trans. Ind. Electron., 2023)

Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests. - Cao Zhan; Lingyu Zhu 003; Yaxin Zhang; Shengchang Ji; Francesco Iannuzzo; Frede Blaabjerg (IEEE Trans. Ind. Electron., 2024)