Non-destructive tester for single event burnout of power diodes. - Giovanni Busatto; Francesco Iannuzzo; Francesco Velardi; Jeffery Wyss (Microelectron. Reliab., 2001)

Non-destructive high temperature characterisation of high-voltage IGBTs. - Giovanni Busatto; B. Cascone; Luigi Fratelli; M. Balsamo; Francesco Iannuzzo; Francesco Velardi (Microelectron. Reliab., 2002)

The Reliability of New Generation Power MOSFETs in Radiation Environment. - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Jeffery Wyss; A. Kaminksy (Microelectron. Reliab., 2002)

MAGFET based current sensing for power integrated circuit. - Giovanni Busatto; Roberto La Capruccia; Francesco Iannuzzo; Francesco Velardi; Roberto Roncella (Microelectron. Reliab., 2003)

Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. - Giovanni Busatto; Francesco Iannuzzo; Francesco Velardi; M. Valentino; Giampiero Pepe (Microelectron. Reliab., 2003)

Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, . - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Jeffery Wyss; A. Candelori (Microelectron. Reliab., 2003)

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Jeffery Wyss; Annunziata Sanseverino; A. Candelori; Giuseppe Currò; Alessandra Cascio; Ferruccio Frisina (Microelectron. Reliab., 2003)

The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Alberto Porzio; Annunziata Sanseverino; Giuseppe Currò; Alessandra Cascio; Ferruccio Frisina (Microelectron. Reliab., 2004)

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. - Giovanni Busatto; Alberto Porzio; Francesco Velardi; Francesco Iannuzzo; Annunziata Sanseverino; Giuseppe Currò (Microelectron. Reliab., 2005)

Experimental study of power MOSFET's gate damage in radiation environment. - Giovanni Busatto; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi; Giuseppe Currò (Microelectron. Reliab., 2006)

Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2008)

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2009)

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2010)

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. - Giovanni Busatto; D. Bisello; Giuseppe Currò; Piero Giubilato; Francesco Iannuzzo; S. Mattiazzo; D. Pantano; Annunziata Sanseverino; Luca Silvestrin; M. Tessaro; Francesco Velardi; Jeffery Wyss (Microelectron. Reliab., 2011)

Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. - Giovanni Busatto; Valentina De Luca; Francesco Iannuzzo; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2012)

Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo; Cesare Ronsisvalle; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2013)

Thermal damage in SiC Schottky diodes induced by SE heavy ions. - Carmine Abbate; Giovanni Busatto; Paolo Cova; Nicola Delmonte; Francesco Giuliani; Francesco Iannuzzo; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2014)

Turn-off instabilities in large area IGBTs. - Carmine Abbate; Francesco Iannuzzo; Giovanni Busatto; Annunziata Sanseverino; Francesco Velardi; Cesare Ronsisvalle; James Victory (Microelectron. Reliab., 2014)

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. - Carmine Abbate; Giovanni Busatto; Francesco Iannuzzo; S. Mattiazzo; Annunziata Sanseverino; Luca Silvestrin; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2015)

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. - Carmine Abbate; Giovanni Busatto; Annunziata Sanseverino; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2017)

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. - Carmine Abbate; Giovanni Busatto; S. Mattiazzo; Annunziata Sanseverino; Luca Silvestrin; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2018)

Measure of high frequency input impedance to study the instability of power devices in short circuit. - Carmine Abbate; Giovanni Busatto; Annunziata Sanseverino; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2018)

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. - Carmine Abbate; Giovanni Busatto; Annunziata Sanseverino; D. Tedesco; Francesco Velardi (Microelectron. Reliab., 2018)