0.25 μm SOI technologies performance for low-power radio-frequency applications. - O. Rozeau; Sébastien Haendler; Jalal Jomaah; J. Boussey; Francis Balestra; C. Raynaud; J. L. Pelloie (ICECS, 2000)

An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET's. - François Dieudonné; F. Daugé; Jalal Jomaah; C. Raynaud; Francis Balestra (Microelectron. Reliab., 2001)

Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. - Sébastien Haendler; Jalal Jomaah; Gérard Ghibaudo; Francis Balestra (Microelectron. Reliab., 2001)

Origin of hot carrier degradation in advanced nMOSFET devices. - B. Cretu; Francis Balestra; Gérard Ghibaudo; G. Guégan (Microelectron. Reliab., 2002)

Low frequency noise in 0.12 mum partially and fully depleted SOI technology. - François Dieudonné; Sébastien Haendler; Jalal Jomaah; Francis Balestra (Microelectron. Reliab., 2003)

On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs. - M. A. Exarchos; François Dieudonné; Jalal Jomaah; George J. Papaioannou; Francis Balestra (Microelectron. Reliab., 2004)

The impact of static and dynamic degradation on SOI "smart-cut" floating body MOSFETs. - M. A. Exarchos; George J. Papaioannou; Jalal Jomaah; Francis Balestra (Microelectron. Reliab., 2005)

On the drain current saturation in short channel MOSFETs. - A. Benfdila; Francis Balestra (Microelectron. J., 2006)

Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs. - M. A. Exarchos; George J. Papaioannou; Jalal Jomaah; Francis Balestra (Microelectron. Reliab., 2009)

New parameter extraction method based on split C-V for FDSOI MOSFETs. - Imed Ben Akkez; Antoine Cros; Claire Fenouillet-Béranger; Frédéric Boeuf; Quentin Rafhay; Francis Balestra; Gérard Ghibaudo (ESSDERC, 2012)

Ultra low power and high performance nanoelectronic devices. - Francis Balestra (ASICON, 2017)

Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory. - Adam Dobri; Simon Jeannot; Fausto Piazza; Carine Jahan; Jean Coignus; Luca Perniola; Francis Balestra (Microelectron. Reliab., 2017)

Nanoscale Devices for the end of the Roadmap. - Francis Balestra (ASICON, 2019)

Status and trends in Nanoelectronic devices for the ultimate integration of ICs. - Francis Balestra (ASICON, 2021)

In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications. - F. Serra Di Santa Maria; Christoforos G. Theodorou; Francis Balestra; Gérard Ghibaudo; Eunjung Cha; Cezar B. Zota (ESSDERC, 2022)

Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K. - F. Serra Di Santa Maria; Francis Balestra; Christoforos G. Theodorou; Gérard Ghibaudo; Cezar B. Zota; Eunjung Cha (IRPS, 2023)