Reconfigurable distributed network control system for industrial plant automation. - Juan Garcia Ortega; Francisco R. Palomo; Antonio Luque; Carmen Aracil; José M. Quero; Daniel Carrión; Francisco Gámiz; Plácido Revilla; Juan Pérez-Tinao; Manuel Moreno; Pedro Robles; Leopoldo García Franquelo (IEEE Trans. Ind. Electron., 2004)

Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET. - Carlos Navarro; Noel Rodriguez; Luca Donetti; Akiko Oliata; Francisco Gámiz; François Andrieu; Olivier Faynot; Claire Fenouillet-Béranger; Sorin Cristoloveanu (ESSDERC, 2012)

Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator. - Raúl Valín Ferreiro; Carlos Sampedro 002; Natalia Seoane; Manuel Aldegunde; Antonio J. García-Loureiro; Andres Godoy; Francisco Gámiz (Int. J. High Perform. Comput. Appl., 2013)

Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs. - V. Velayudhan; Francisco Gámiz; Javier Martín-Martínez; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2013)

Size-dependent electron mobility in InAs nanowires. - Enrique G. Marin; Francisco Javier García Ruiz; Andres Godoy; Isabel M. Tienda-Luna; Francisco Gámiz (ESSDERC, 2014)

A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo. - Francesco Vecil; José Miguel Mantas; María J. Cáceres; Carlos Sampedro 002; Andres Godoy; Francisco Gámiz (Comput. Math. Appl., 2014)

Threshold voltage and on-current Variability related to interface traps spatial distribution. - V. Velayudhan; Javier Martín-Martínez; Marc Porti; Carlos Couso; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Carlos Marquez; Francisco Gámiz (ESSDERC, 2015)

Three-dimensional multi-subband simulation of scaled FinFETs. - Luca Donetti; Carlos Sampedro 002; Francisco Javier García Ruiz; Andres Godoy; Francisco Gámiz (ESSDERC, 2017)

Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator. - Cristina Medina-Bailon; Toufik Sadi; Carlos Sampedro 002; José Luis Padilla; Luca Donetti; Vihar P. Georgiev; Francisco Gámiz; Asen Asenov (NMA, 2018)

Temperature and Gate Leakage Influence on the Z2-FET Memory Operation. - Carlos Marquez; Santiago Navarro; Carlos Navarro; Norberto Salazar; Philippe Galy; Sorin Cristoloveanu; Francisco Gámiz (ESSDERC, 2019)

Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator. - Cristina Medina-Bailon; Carlos Sampedro 002; José Luis Padilla; Luca Donetti; Vihar P. Georgiev; Francisco Gámiz; Asen Asenov (LSSC, 2019)

Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap. - Carlos Sampedro 002; Cristina Medina-Bailon; Luca Donetti; José Luis Padilla; Carlos Navarro; Carlos Marquez; Francisco Gámiz (LSSC, 2019)

On the Low-Frequency Noise Characterization of Z2-FET Devices. - Carlos Marquez; Carlos Navarro; Santiago Navarro; José Luis Padilla; Luca Donetti; Carlos Sampedro 002; Philippe Galy; Yong-Tae Kim; Francisco Gámiz (IEEE Access, 2019)

Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power. - Carlos Navarro; Carlos Marquez; Santiago Navarro; Carmen Lozano; Sehyun Kwon; Yong-Tae Kim; Francisco Gámiz (IEEE Access, 2019)

Active Radiation-Hardening Strategy in Bulk FinFETs. - Antonio Calomarde; Antonio Rubio 001; Francesc Moll; Francisco Gámiz (IEEE Access, 2020)

Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic. - Carlos Navarro; Carlos Marquez; Santiago Navarro; Francisco Gámiz (IEEE Access, 2020)

Metamaterial-Based Reconfigurable Intelligent Surface: 3D Meta-Atoms Controlled by Graphene Structures. - Carlos Molero; Ángel Palomares-Caballero; Antonio Alex-Amor; Ignacio Parellada-Serrano; Francisco Gámiz; Pablo Padilla; Juan F. Valenzuela-Valdés (IEEE Commun. Mag., 2021)

Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact. - Antonio Calomarde; Salvador Manich; Antonio Rubio 001; Francisco Gámiz (IEEE Access, 2022)