Electronic properties of GeySi1-y: H films deposited by LF PECVD at low temperatures. - Ismael Cosme; Andrey Kosarev; Francisco Temoltzi; Adrian Itzmoyotl (CCE, 2011)

Study of doping of Ge0.96Si0.04: H films with B, and P during low frequency plasma deposition at low temperature. - Ismael Cosme; Andrey Kosarev; Francisco Temoltzi; Adrian Itzmoyotl (CCE, 2011)