Temperature and hump effect impact on output voltage spread of low power bandgap designed in the sub-threshold area. - Y. Joly; L. Truphemus; Laurent Lopez; Jean-Michel Portal; Hassen Aziza; Franck Julien; Pascal Fornara (ISCAS, 2011)

Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress. - Y. Joly; Laurent Lopez; Jean-Michel Portal; Hassen Aziza; Jean-Luc Ogier; Y. Bert; Franck Julien; Pascal Fornara (Microelectron. Reliab., 2011)

Dynamic power reduction through process and design optimizations on CMOS 80 nm embedded non-volatile memories technology. - Jordan Innocenti; Loic Welter; Franck Julien; Laurent Lopez; Jacques Sonzogni; Stephan Niel; Arnaud Régnier; Emmanuel Paire; Karen Labory; Eric Denis; Jean-Michel Portal; Pascal Masson (MWSCAS, 2014)

Layout optimizations to decrease internal power and area in digital CMOS standard cells. - Jordan Innocenti; Franck Julien; Jean-Michel Portal; Laurent Lopez; Q. Hubert; Pascal Masson; Jacques Sonzogni; Stephan Niel; Arnaud Régnier (MIPRO, 2015)

Dynamic current reduction of CMOS digital circuits through design and process optimization. - Jordan Innocenti; Loïc Welter; Nicolas Borrel; Franck Julien; Jean-Michel Portal; Jacques Sonzogni; Laurent Lopez; Pascal Masson; Stephan Niel; Philippe Dreux; Julia Castellan (PATMOS, 2015)

Circuit-level evaluation of a new zero-cost transistor in an embedded non-volatile memory CMOS technology. - Paul Devoge; Hassen Aziza; Philippe Lorenzini; Franck Julien; Abderrezak Marzaki; Alexandre Malherbe; Marc Mantelli; Thomas Sardin; Sébastien Haendler; Arnaud Régnier; Stephan Niel (DTIS, 2021)

A Schmitt trigger to benchmark the performance of a new zero-cost transistor. - Paul Devoge; Hassen Aziza; Philippe Lorenzini; Pascal Masson; Alexandre Malherbe; Franck Julien; Abderrezak Marzaki; Arnaud Régnier; Stephan Niel (ICECS 2022, 2022)

Digital-to-analog converters to benchmark the matching performance of a new zero-cost transistor. - Paul Devoge; Hassen Aziza; Philippe Lorenzini; Alexandre Malherbe; Franck Julien; Abderrezak Marzaki; Arnaud Régnier; Stephan Niel (ISCAS, 2022)

Notched gate MOSFET for capacitance reduction in RF SOI technology. - Lucas Antunes Tambara; Pascal Masson; Julien Amouroux; Stéphane Monfray; Julien Dura; Frederic Gianesello; Julien Babic; Romain Debroucke; Loic Welter; Siddhartha Dhar; Bernadette Gros; Clement Charbuillet; et al. (DTTIS, 2023)

MOSFET electron mobility enhancement using source/drain recess. - Lucas Antunes Tambara; Paul Devoge; Pascal Masson; Julien Amouroux; Julien Dura; C. Rivero; Franck Julien (DTTIS, 2024)