230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications. - Pascal Chevalier 002; Cyril Fellous; Laurent Rubaldo; Franck Pourchon; Sébastien Pruvost; Rudy Beerkens; Fabienne Saguin; Nicolas Zerounian; Benoît Barbalat; Sylvie Lépilliet; Didier Dutartre; Didier Céli; et al. (IEEE J. Solid State Circuits, 2005)

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. - François Andrieu; Mikaël Cassé; E. Baylac; P. Perreau; O. Nier; Denis Rideau; R. Berthelon; Franck Pourchon; A. Pofelski; Barbara De Salvo; C. Gallon; Vincent Mazzocchi; et al. (ESSDERC, 2014)

A two-step de-embedding method valid up to 110 GHz. - J. Bazzi; H. Kassem; Arnaud Curutchet; Franck Pourchon; N. Derrier; Didier Céli; Thomas Zimmer (ICM, 2017)

Circuit Monitoring Across Design Life-Cycle in 28nm FD-SOI and 40nm Bulk CMOS technologies. - Sylvain Clerc; Kedar Janardan Dhori; Robin M. Wilson; Rohit Goel; Sébastien Marchal; Franck Pourchon; Christian Dutto; Ricardo Gomez Gomez (ESSCIRC, 2021)