Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below. - Claire Fenouillet-Béranger; P. Perreau; S. Denorme; L. Tosti; François Andrieu; Olivier Weber; S. Barnola; C. Arvet; Y. Campidelli; Sébastien Haendler; R. Beneyton; C. Perrot; et al. (ESSCIRC, 2009)

32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit. - Olivier Thomas; Jean-Philippe Noel; Claire Fenouillet-Béranger; Marie-Anne Jaud; J. Dura; P. Perreau; Frédéric Boeuf; François Andrieu; D. Delprat; F. Boedt; Konstantin Bourdelle; Bich-Yen Nguyen; et al. (ISCAS, 2010)

On the UTBB SOI MOSFET performance improvement in quasi-double-gate regime. - Valeria Kilchytska; Denis Flandre; François Andrieu (ESSDERC, 2012)

Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET. - Carlos Navarro; Noel Rodriguez; Luca Donetti; Akiko Oliata; Francisco Gámiz; François Andrieu; Olivier Faynot; Claire Fenouillet-Béranger; Sorin Cristoloveanu (ESSDERC, 2012)

Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below. - J. Mazurier; Olivier Weber; François Andrieu; Alain Toffoli; Olivier Thomas; Fabienne Allain; Jean-Philippe Noel; Marc Belleville; Olivier Faynot; T. Poiroux (J. Low Power Electron., 2012)

Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets. - Sergej Makovejev; Babak Kazemi Esfeh; Jean-Pierre Raskin; Denis Flandre; Valeria Kilchytska; François Andrieu (ESSDERC, 2013)

Why are SCE overestimated in FD-SOI MOSFETs? - Carlos Navarro; Maryline Bawedin; François Andrieu; Bruno Sagnes; Sorin Cristoloveanu (ESSDERC, 2013)

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. - François Andrieu; Mikaël Cassé; E. Baylac; P. Perreau; O. Nier; Denis Rideau; R. Berthelon; Franck Pourchon; A. Pofelski; Barbara De Salvo; C. Gallon; Vincent Mazzocchi; et al. (ESSDERC, 2014)

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. - Guillaume Besnard; Xavier Garros; François Andrieu; Phuong Nguyen; William van den Daele; Patrick Reynaud; Walter Schwarzenbach; Daniel Delprat; Konstantin Bourdelle; Gilles Reimbold; Sorin Cristoloveanu (ESSDERC, 2014)

CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes. - Carlos Navarro; Maryline Bawedin; François Andrieu; Jacques Cluzel; Xavier Garros; Sorin Cristoloveanu (ESSDERC, 2014)

Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs. - J. Mazurier; Olivier Weber; François Andrieu; Cyrille Le Royer; Olivier Faynot; Maud Vinet (ICICDT, 2014)

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. - Guillaume Besnard; Xavier Garros; Alexandre Subirats; François Andrieu; X. Federspiel; M. Rafik; Walter Schwarzenbach; Gilles Reimbold; Olivier Faynot; Sorin Cristoloveanu (IRPS, 2015)

Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration. - R. Berthelon; François Andrieu; P. Perreau; E. Baylac; A. Pofelski; Emmanuel Josse; Didier Dutartre; A. Claverie; Michel Haond (ESSDERC, 2016)

Impact of intermediate BEOL technology on standard cell performances of 3D VLSI. - Melanie Brocard; Guillaume Berhault; Sébastien Thuries; Fabien Clermidy; Perrine Batude; Claire Fenouillet-Béranger; Laurent Brunet; François Andrieu; Fabien Deprat; Joris Lacord; Olivier Rozeau; Gerald Cibrario; et al. (ESSDERC, 2016)

Opportunities brought by sequential 3D CoolCube™ integration. - Maud Vinet; Perrine Batude; Claire Fenouillet-Béranger; Laurent Brunet; Vincent Mazzocchi; Cao-Minh Vincent Lu; Fabien Deprat; Jessy Micout; Bernard Previtali; Paul Besombes; Nils Rambal; François Andrieu; et al. (ESSDERC, 2016)

Recent advances in 3D VLSI integration. - Claire Fenouillet-Béranger; Perrine Batude; Laurent Brunet; Vincent Mazzocchi; Cao-Minh Vincent Lu; Fabien Deprat; Jessy Micout; M.-P. Samson; Bernard Previtali; Paul Besombes; Nils Rambal; François Andrieu; et al. (ICICDT, 2016)

Guidelines for intermediate back end of line (BEOL) for 3D sequential integration. - Claire Fenouillet-Béranger; S. Beaurepaire; Fabien Deprat; Alexandre Ayres De Sousa; Laurent Brunet; Perrine Batude; Olivier Rozeau; François Andrieu; Paul Besombes; M.-P. Samson; Bernard Previtali; F. Nemouchi; et al. (ESSDERC, 2017)

Transistor Temperature Deviation Analysis in Monolithic 3D Standard Cells. - Melanie Brocard; Benoît Mathieu; Jean-Philippe Colonna; Cristiano Santos; Claire Fenouillet-Béranger; Cao-Minh Vincent Lu; Gerald Cibrario; Laurent Brunet; Perrine Batude; François Andrieu; Sébastien Thuries; Olivier Billoint (ISVLSI, 2017)

A review on opportunities brought by 3D-monolithic integration for CMOS device and digital circuit. - François Andrieu; Perrine Batude; Laurent Brunet; Claire Fenouillet-Béranger; Didier Lattard; Sébastien Thuries; Olivier Billoint; Richard Fournel; Maud Vinet (ICICDT, 2018)

Ultra-High-density 3D vertical RRAM with stacked JunctionLess nanowires for In-Memory-Computing applications. - Mona Ezzadeen; D. Bosch; Bastien Giraud; Sylvain Barraud; Jean-Philippe Noël; Didier Lattard; Joris Lacord; Jean-Michel Portal; François Andrieu (CoRR, 2020)

Low-Overhead Implementation of Binarized Neural Networks Employing Robust 2T2R Resistive RAM Bridges. - Mona Ezzadeen; Atreya Majumdar; Marc Bocquet; Bastien Giraud; Jean-Philippe Noël; François Andrieu; Damien Querlioz; Jean-Michel Portal (ESSDERC, 2021)

Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. - Tadeu Mota Frutuoso; Jose Lugo-Alvarez; Xavier Garros; Laurent Brunet; Joris Lacord; Louis Gerrer; Mikaël Cassé; Edoardo Catapano; Claire Fenouillet-Béranger; François Andrieu; Fred Gaillard; Philippe Ferrari (IRPS, 2021)

Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements. - Justine Barbot; Jean Coignus; Nicolas Vaxelaire; Catherine Carabasse; Olivier Glorieux; Messaoud Bedjaoui; François Aussenac; François Andrieu; François Triozon; Laurent Grenouillet (ESSCIRC, 2022)

Frequency modulation of conductance level in PCM device for neuromorphic applications. - Ahmed Trabelsi; Carlo Cagli; Tifenn Hirtzlin; Olga Cueto; Marie Claire Cyrille; Elisa Vianello; Valentina Meli; Veronique Sousa; Guillaume Bourgeois; François Andrieu (ESSCIRC, 2022)

Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction. - C. De Camaret; Guillaume Bourgeois; Olga Cueto; Valentina Meli; S. Martin; D. Despois; V. Beugin; Niccolo Castellani; Marie Claire Cyrille; François Andrieu; Julien Arcamone; Y. Le-Friec; et al. (ESSDERC, 2022)

Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement. - Camille Laguna; Mathieu Bernard; Julien Garrione; Niccolo Castellani; Valentina Meli; S. Martin; François Aussenac; D. Rouchon; N. Rochat; Emmanuel Nolot; Guillaume Bourgeois; Marie Claire Cyrille; et al. (ESSDERC, 2022)

TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory. - Giusy Lama; Mathieu Bernard; Julien Garrione; Nicolas Bernier; Niccolo Castellani; Guillaume Bourgeois; Marie Claire Cyrille; François Andrieu; Gabriele Navarro (ESSDERC, 2022)

A novel 3D 1T1R RRAM architecture for memory-centric Hyperdimensional Computing. - T. Dubreuil; P. Amari; Sylvain Barraud; Joris Lacord; Eduardo Esmanhotto; Valentina Meli; S. Martin; Niccolo Castellani; Bernard Previtali; François Andrieu (IMW, 2022)

1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing. - Joel Minguet Lopez; François Rummens; Lucas Reganaz; A. Heraud; Tifenn Hirtzlin; Laurent Grenouillet; Gabriele Navarro; Mathieu Bernard; Catherine Carabasse; Niccolo Castellani; Valentina Meli; S. Martin; et al. (IMW, 2022)

High temperature stability embedded ReRAM for 2x nm node and beyond. - Gabriel Molas; Giuseppe Piccolboni; Alessandro Bricalli; Anthonin Verdy; I. Naot; Y. Cohen; Amir Regev; I. Naveh; Damien Deleruyelle; Quentin Rafhay; Niccolo Castellani; Lucas Reganaz; et al. (IMW, 2022)

Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate. - Gabriele Navarro; C. Sabbione; Valentina Meli; L. E. Nistor; M. Frei; Julien Garrione; M. Tessaire; F. Fillot; Nicolas Bernier; Emmanuel Nolot; Benoit Sklénard; J. Li; et al. (IMW, 2022)

Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations. - Eduardo Esmanhotto; Tifenn Hirtzlin; Niccolo Castellani; S. Martin; Bastien Giraud; François Andrieu; Jean-François Nodin; Damien Querlioz; Jean-Michel Portal; Elisa Vianello (IRPS, 2022)

Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks. - Filippo Moro; Eduardo Esmanhotto; Tifenn Hirtzlin; Niccolo Castellani; Ahmed Trabelsi; Thomas Dalgaty; Gabriel Molas; François Andrieu; Stefano Brivio; Sabina Spiga; Giacomo Indiveri; Melika Payvand; et al. (ISCAS, 2022)

Binary ReRAM-based BNN first-layer implementation. - Mona Ezzadeen; Atreya Majumdar; Sigrid Thomas; Jean-Philippe Noël; Bastien Giraud; Marc Bocquet; François Andrieu; Damien Querlioz; Jean-Michel Portal (DATE, 2023)

Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory. - T. Dubreuil; Sylvain Barraud; J.-M. Pedini; Jean-Michel Hartmann; F. Boulard; A. Sarrazin; A. Gharbi; Johannes Sturm; A. Lambert; S. Martin; Niccolo Castellani; A. Anotta; et al. (ESSDERC, 2023)

Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes. - J. Laguerre; Marc Bocquet; Olivier Billoint; Simon Martin 006; Jean Coignus; Catherine Carabasse; Thomas Magis; T. Dewolf; François Andrieu; Laurent Grenouillet (IMW, 2023)

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited). - Laurent Grenouillet; Justine Barbot; J. Laguerre; Simon Martin 006; Catherine Carabasse; M. Louro; Messaoud Bedjaoui; S. Minoret; S. Kerdilès; C. Boixaderas; Thomas Magis; Carine Jahan; et al. (IRPS, 2023)

Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability. - Lucas Reganaz; Damien Deleruyelle; Quentin Rafhay; Joel Minguet Lopez; Niccolo Castellani; Jean-François Nodin; Alessandro Bricalli; Giuseppe Piccolboni; Gabriel Molas; François Andrieu (IRPS, 2023)

1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation. - Joel Minguet Lopez; Manon Dampfhoffer; Tifenn Hirtzlin; Lucas Reganaz; Laurent Grenouillet; Gabriele Navarro; Mathieu Bernard; Thomas Magis; Catherine Carabasse; Niccolo Castellani; Valentina Meli; Elisa Vianello; et al. (MIXDES, 2023)

Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell. - Fadi Jebali; Atreya Majumdar; Clement Türck; Kamel-Eddine Harabi; Mathieu-Coumba Faye; Eloi Muhr; Jean-Pierre Walder; Oleksandr Bilousov; Amadeo Michaud; Elisa Vianello; Tifenn Hirtzlin; François Andrieu; et al. (CoRR, 2023)

Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations. - Olivier Billoint; Simon Martin 006; J. Laguerre; L. Hosier; Jean Coignus; Catherine Carabasse; François Andrieu; Laurent Grenouillet (IMW, 2024)

A synergistic fault tolerance framework for Mbit 28nm embedded RRAM. - Papavramidou Panagiota; Sebastien Ricavy; Christopher Mounet; Carine Jahan; Niccolo Castellani; François Andrieu (IOLTS, 2024)

Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays. - J. Laguerre; Simon Martin 006; Jean Coignus; Catherine Carabasse; Marc Bocquet; François Andrieu; Laurent Grenouillet (IRPS, 2024)

First Radio-Frequency Circuits Fabricated in Top-Tier of a Full 3D Sequential Integration Process at mmW for 5G Applications. - J. Luge-Alvarez; J. B. David; Alexandre Siligaris; Vincent Puyal; G. Moritz; Tadeu Mota Frutuoso; V. Lapras; Claire Fenouillet-Béranger; Laurent Brunet; P. Vincent; Didier Lattard; Xavier Garros; et al. (VLSI Technology and Circuits, 2024)

Compact MEOL OxRAM with 14 Conductance Levels for Dense Embedded Inference Computing. - J. Minguet Lopez; Sylvain Barraud; Manon Dampfhoffer; Aurelie Souhaité; T. Dubreuil; J.-M. Pedini; C. Comboroure; A. Gharbi; F. Boulard; C. Castan; A. Lambert; François Andrieu (IRPS, 2025)

Reliability Performances Tuning in Ge-rich GeSbTe Phase-Change Memory Thanks to Multilayered Ge//GeSbTe Stacks. - N.-A. Nguyen; O. Daoudi; Mathieu Bernard; L. Fellouh; M. Tessaire; C. Sabbione; Z. Saghi; T. Monniez; C. De Camaret; Emmanuel Nolot; Guillaume Bourgeois; A. Salvi; et al. (IRPS, 2025)