An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET's. - François Dieudonné; F. Daugé; Jalal Jomaah; C. Raynaud; Francis Balestra (Microelectron. Reliab., 2001)

Low frequency noise in 0.12 mum partially and fully depleted SOI technology. - François Dieudonné; Sébastien Haendler; Jalal Jomaah; Francis Balestra (Microelectron. Reliab., 2003)

On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs. - M. A. Exarchos; François Dieudonné; Jalal Jomaah; George J. Papaioannou; Francis Balestra (Microelectron. Reliab., 2004)