Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities. - Veeresh Deshpande; Sylvain Barraud; Xavier Jehl; Romain Wacquez; Maud Vinet; Remi Coquand; B. Roche; B. Voisin; François Triozon; C. Vizioz; L. Tosti; Bernard Previtali; et al. (ESSDERC, 2012)

Transport properties of strained silicon nanowires. - Yann-Michel Niquet; Christophe Delerue; Viet Hung Nguyen; Christophe Krzeminski; François Triozon (ESSDERC, 2012)

Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. - J. Pelloux-Prayer; Mikaël Cassé; François Triozon; Sylvain Barraud; Yann-Michel Niquet; J.-L. Rouviere; Olivier Faynot; Gilles Reimbold (ESSDERC, 2015)

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. - Gabriel Mugny; F. G. Pereira; Denis Rideau; François Triozon; Yann-Michel Niquet; Marco Pala 001; D. Garetto; Christophe Delerue (ESSDERC, 2016)

Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions. - Riccardo Fontanini; Justine Barbot; Mattia Segatto; Suzanne Lancaster; Quang T. Duong; Francesco Driussi; Laurent Grenouillet; François Triozon; Jean Coignus; Thomas Mikolajick; Stefan Slesazeck; David Esseni (ESSDERC, 2021)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. - B. Rrustemi; Aby-Gaël Viey; Marie-Anne Jaud; François Triozon; William Vandendaele; Charles Leroux; Jacques Cluzel; S. Martin; Cyrille Le Royer; Romain Gwoziecki; Roberto Modica; Ferdinando Iucolano; et al. (ESSDERC, 2021)

Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements. - Justine Barbot; Jean Coignus; Nicolas Vaxelaire; Catherine Carabasse; Olivier Glorieux; Messaoud Bedjaoui; François Aussenac; François Andrieu; François Triozon; Laurent Grenouillet (ESSCIRC, 2022)