Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing. - Joachim Würfl; Paul Kurpas; Frank Brunner; Michael Mai; Matthias Rudolph; Markus Weyers (Microelectron. Reliab., 2001)

Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE. - Frank Brunner; A. Braun; Paul Kurpas; J. Schneider; Joachim Würfl; Markus Weyers (Microelectron. Reliab., 2003)

Reliability issues of GaN based high voltage power devices. - Joachim Würfl; Eldad Bahat-Treidel; Frank Brunner; E. Cho; Oliver Hilt; Ponky Ivo; A. Knauer; Paul Kurpas; Richard Lossy; Matthias Schulz; S. Singwald; Markus Weyers; et al. (Microelectron. Reliab., 2011)

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. - Mattia Capriotti; Clément Fleury; Ole Bethge; Matteo Rigato; Suzanne Lancaster; Dionyz Pogany; Gottfried Strasser; Eldad Bahat-Treidel; Oliver Hilt; Frank Brunner; Joachim Würfl (ESSDERC, 2015)

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. - Matteo Meneghini; Oliver Hilt; Clément Fleury; Riccardo Silvestri; Mattia Capriotti; Gottfried Strasser; Dionyz Pogany; Eldad Bahat-Treidel; Frank Brunner; A. Knauer; Joachim Würfl; Isabella Rossetto; et al. (Microelectron. Reliab., 2016)

GaN-channel HEMTs with AlN buffer for high-voltage switching. - Oliver Hilt; Frank Brunner; Eldad Bahat-Treidel; Mihaela Wolf; Joachim Würfl (DRC, 2021)