A temperature compensation word-line voltage generator for multi-level cell NAND Flash memories. - Toru Tanzawa; Tomoharu Tanaka; Satoru Tamada; Jiro Kishimoto; Sjigekazu Yamada; Koichi Kawai; Takaaki Ichikawa; P. Chiang; Frank Roohparvar (ESSCIRC, 2010)

A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s. - G. G. Marotta; Agostino Macerola; Andrea D'Alessandro; A. Torsi; C. Cerafogli; C. Lattaro; C. Musilli; D. Rivers; Emanuele Sirizotti; F. Paolini; G. Imondi; G. Naso; et al. (ISSCC, 2010)