Feasibility study on in situ CCVD grown CNTs for field-effect power device applications. - Martin Keyn; Pia Juliane Wessely; Frank Wessely; Lorraine Rispal; Johannes Palm; Udo Schwalke (DTIS, 2012)

Nanoelectronics: From silicon to graphene. - Udo Schwalke; Pia Juliane Wessely; Frank Wessely; Martin Keyn; Lorraine Rispal (DTIS, 2012)

Dopant-free CMOS: A new device concept. - Frank Wessely; Tillmann Krauss; Udo Schwalke (DTIS, 2012)

On/off-current ratios of transfer-free bilayer graphene FETs as a function of temperature. - Pia Juliane Wessely; Frank Wessely; Emrah Birinci; Udo Schwalke; Bernadette Riedinger (DTIS, 2012)

Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material. - Udo Schwalke; Frank Wessely; Tillmann Krauss (IDT, 2013)

Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs. - Frank Wessely; Tillmann Krauss; Udo Schwalke (Microelectron. J., 2013)

An electrostatically doped planar device concept. - Tillmann Krauss; Frank Wessely; Udo Schwalke (DTIS, 2014)

Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS. - Tillmann Krauss; Frank Wessely; Udo Schwalke (SSD, 2016)

Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS. - Tillmann Krauss; Frank Wessely; Udo Schwalke (DTIS, 2017)

Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS. - Tillmann Krauss; Frank Wessely; Udo Schwalke (DTIS, 2018)