Physical modeling of the hysteresis in M0S2 transistors. - Theresia Knobloch; Gerhard Rzepa; Yury Yu. Illarionov; Michael Waltl; Franz Schanovsky; Markus Jech; Bernhard Stampfer; Marco M. Furchi; Thomas Muller; Tibor Grasser (ESSDERC, 2017)

Cell Designer - a Comprehensive TCAD-Based Framework for DTCO of Standard Logic Cells. - Zlatan Stanojevic; Georg Strof; Franz Schanovsky; Klaus Steiner; Oskar Baumgartner; Christian Kernstock; Markus Karner (ESSDERC, 2018)

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. - Tibor Grasser; Bernhard Stampfer; Michael Waltl; Gerhard Rzepa; Karl Rupp; Franz Schanovsky; Gregor Pobegen; Katja Puschkarsky; Hans Reisinger; Barry J. O'Sullivan; Ben Kaczer (IRPS, 2018)

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. - Franz Schanovsky; Devin Verreck; Antonio Arreghini; Gerhard Rzepa; Zlatan Stanojevic; Christian Kernstock; Oskar Baumgartner; Maarten Rosmeulen; Markus Karner (IMW, 2021)

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. - Gerhard Rzepa; Markus Karner; Oskar Baumgartner; Georg Strof; Franz Schanovsky; Ferdinand Mitterbauer; Christian Kernstock; Hui-Wen Karner; Pieter Weckx; Geert Hellings; Dieter Claes; Zhicheng Wu; et al. (IRPS, 2021)

A Study of the Variability and Design Considerations of Ferroelectric VNAND Memories With Polycrystalline Films Using An Experimentally Validated TCAD Model. - Mischa Thesberg; Franz Schanovsky; Zlatan Stanojevic; Oskar Baumgartner; Markus Karner (ESSDERC, 2023)

TCAD for Circuits and Systems: Process Emulation, Parasitics Extraction, Self-Heating. - Zlatan Stanojevic; Xaver Klemenschits; Gerhard Rzepa; Ferdinand Mitterbauer; Christian Schleich; Franz Schanovsky; Oskar Baumgartner; Markus Karner (BCICTS, 2024)