Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs. - Michael Graef; Thomas Holtij; Franziska Hain; Alexander Kloes; Benjamín Iñíguez (MIXDES, 2013)

Unified charge model for short-channel junctionless double gate MOSFETs. - Thomas Holtij; Michael Graef; Franziska Hain; Alexander Kloes; Benjamín Iñíguez (MIXDES, 2013)

Improved analytical potential modeling in double-gate tunnel-FETs. - Michael Graef; Thomas Holtij; Franziska Hain; Alexander Kloes; Benjamín Iñíguez (MIXDES, 2014)

A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. - Michael Graef; Thomas Holtij; Franziska Hain; Alexander Kloes; Benjamín Iñíguez (Microelectron. J., 2014)

Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. - Fabian Horst; Michael Graef; Fabian Hosenfeld; Atieh Farokhnejad; Franziska Hain; Gia Vinh Luong; Qing-Tai Zhao; Benjamín Iñíguez; Alexander Kloes (ESSDERC, 2016)

Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs. - Michael Graef; Franziska Hain; Fabian Hosenfeld; Fabian Horst; Atieh Farokhnejad; Alexander Kloes; Benjamín Iñíguez (MIXDES, 2016)

Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs. - Michael Graef; Franziska Hain; Fabian Hosenfeld; Fabian Horst; Atieh Farokhnejad; Benjamín Iñíguez; Alexander Kloes (MIXDES, 2017)