A new method for quickly evaluating reversible and permanent components of the BTI degradation. - Xavier Garros; Alexandre Subirats; Gilles Reimbold; Fred Gaillard; Cheikh Diouf; X. Federspiel; Vincent Huard; M. Rafik (IRPS, 2018)

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). - Antoine Laurent; Xavier Garros; Sylvain Barraud; J. Pelloux-Prayer; Mikaël Cassé; Fred Gaillard; X. Federspiel; David Roy 001; E. Vincent; Gérard Ghibaudo (IRPS, 2018)

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. - William Vandendaele; Xavier Garros; Thomas Lorin; Erwan Morvan; A. Torres; René Escoffier; Marie-Anne Jaud; Marc Plissonnier; Fred Gaillard (IRPS, 2018)

Study of forward AC stress degradation of GaN-on-Si Schottky diodes. - Thomas Lorin; William Vandendaele; Romain Gwoziecki; Charlotte Gillot; Jérome Biscarrat; Gérard Ghibaudo; Fred Gaillard (Microelectron. Reliab., 2018)

Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning. - Carlo Cagli; Luca Perniola; Fred Gaillard; Stefan Dünkel; Thomas Melde; B. Mueller; Martin Trentzsch; Sven Wittek; Sven Beyer (IRPS, 2019)

Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. - A. P. Nguyen; Xavier Garros; M. Rafik; Florian Cacho; David Roy 001; Xavier Federspiel; Fred Gaillard (IRPS, 2019)

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Romain Gwoziecki; A. Torres; Marc Plissonnier; Fred Gaillard; Gérard Ghibaudo; Roberto Modica; Ferdinando Iucolano; Matteo Meneghini; Gaudenzio Meneghesso (IRPS, 2019)

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. - Roméo Kom Kammeugne; Charles Leroux; Tadeu Mota Frutuoso; Jacques Cluzel; Laura Vauche; Cyrille Le Royer; Romain Gwoziecki; Xavier Garros; Fred Gaillard; Matthew Charles; Edwige Bano; Gérard Ghibaudo (ESSDERC, 2021)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. - B. Rrustemi; Aby-Gaël Viey; Marie-Anne Jaud; François Triozon; William Vandendaele; Charles Leroux; Jacques Cluzel; S. Martin; Cyrille Le Royer; Romain Gwoziecki; Roberto Modica; Ferdinando Iucolano; et al. (ESSDERC, 2021)

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. - Laurent Grenouillet; Niccolo Castellani; Alain Persico; Valentina Meli; Simon Martin 006; Olivier Billoint; R. Segaud; Stefania Bernasconi; C. Pellissier; Carine Jahan; Christelle Charpin-Nicolle; P. Dezest; et al. (IMW, 2021)

Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. - Tadeu Mota Frutuoso; Jose Lugo-Alvarez; Xavier Garros; Laurent Brunet; Joris Lacord; Louis Gerrer; Mikaël Cassé; Edoardo Catapano; Claire Fenouillet-Béranger; François Andrieu; Fred Gaillard; Philippe Ferrari (IRPS, 2021)

BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. - Louis Gerrer; Jacques Cluzel; Fred Gaillard; Xavier Garros; Xavier Federspiel; Florian Cacho; David Roy 001; E. Vincent (IRPS, 2021)

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Jean Coignus; Jacques Cluzel; Alexis Krakovinsky; Simon Martin 006; Jérome Biscarrat; Romain Gwoziecki; Veronique Sousa; Fred Gaillard; Roberto Modica; et al. (IRPS, 2021)

Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K. - Lauriane Contamin; Mikaël Cassé; Xavier Garros; Fred Gaillard; Maud Vinet; Philippe Galy; André Juge; Emmanuel Vincent 004; Silvano De Franceschi; Tristan Meunier (IRPS, 2022)

Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors. - Tadeu Mota Frutuoso; Xavier Garros; Jose Lugo-Alvarez; Roméo Kom Kammeugne; L. D. M. Zouknak; Abygaël Viey; W. van den Daele; Philippe Ferrari; Fred Gaillard (IRPS, 2022)

Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration. - Tadeu Mota Frutuoso; Xavier Garros; Perrine Batude; Laurent Brunet; Joris Lacord; Benoit Sklénard; V. Lapras; Claire Fenouillet-Béranger; M. Ribotta; A. Magalhaes-Lucas; J. Kanyandekwe; R. Kies; et al. (VLSI Technology and Circuits, 2022)

Specificities of linear Si QD arrays integration and characterization. - Heimanu Niebojewski; Benoit Bertrand; Etienne Nowak; Thomas Bedecarrats; Bruna Cardoso Paz; Lauriane Contamin; Pierre-André Mortemousque; V. Labracherie; L. Brevard; H. Sahin; Jean Charbonnier; C. Thomas; et al. (VLSI Technology and Circuits, 2022)

A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. - A. Divay; Cédric Dehos; Ismael Charlet; Fred Gaillard; B. Duriez; Xavier Garros; J. Antonijevic; Joycelyn Hai; Nathalie Revil; Jeremie Forest; Vincent Knopik; Florian Cacho; et al. (IRPS, 2024)