A new method to quantify retention-failed cells of an EEPROM CAST. - Claire Le Roux; Laurent Lopez; Abdellatif Firiti; Jean-Luc Ogier; Frédéric Lalande; Romain Laffont; Gilles Micolau (Microelectron. Reliab., 2007)

Flash Memory Cell Compact Modeling Using PSP Model. - Anthony Maure; Pierre Canet; Frédéric Lalande; Bertrand Delsuc; Jean Devin (BMAS, 2008)

Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories. - Jérémy Postel-Pellerin; Frédéric Lalande; Pierre Canet; Rachid Bouchakour; F. Jeuland; B. Bertello; B. Villard (Microelectron. Reliab., 2009)

Modeling charge variation during data retention of MLC Flash memories. - Jérémy Postel-Pellerin; Frédéric Lalande; Pierre Canet; Rachid Bouchakour; F. Jeuland; L. Morancho (Microelectron. Reliab., 2009)

A Modelisation of the temperature dependence of the Fowler-Nordheim current in EEPROM memories. - M. Roca; Romain Laffont; Gilles Micolau; Frédéric Lalande; O. Pizzuto (Microelectron. Reliab., 2009)

Leakage paths identification in NVM using biased data retention. - Jérémy Postel-Pellerin; Romain Laffont; Gilles Micolau; Frédéric Lalande; Arnaud Régnier; Bernard Bouteille (Microelectron. Reliab., 2010)

Investigation of the effects of constant voltage stress on thin SiO2 layers using dynamic measurement protocols. - Philippe Chiquet; Pascal Masson; Romain Laffont; Gilles Micolau; Jérémy Postel-Pellerin; Frédéric Lalande; Bernard Bouteille; Jean-Luc Ogier (Microelectron. Reliab., 2012)