Failures in ultrathin oxides: Stored energy or carrier energy driven? - S. Bruyère; Frederic Monsieur; David Roy 001; E. Vincent; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. - M. Fadlallah; Arkadiusz Szewczyk; C. Giannakopoulos; B. Cretu; Frederic Monsieur; T. Devoivre; Jalal Jomaah; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. - Frederic Monsieur; E. Vincent; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. - Frederic Monsieur; E. Vincent; David Roy 001; S. Bruyère; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Gate oxide Reliability assessment optimization. - Frederic Monsieur; E. Vincent; David Roy 001; S. Bruyère; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2002)

Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. - David Roy 001; S. Bruyère; E. Vincent; Frederic Monsieur (Microelectron. Reliab., 2002)

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. - Frederic Monsieur; E. Vincent; Vincent Huard; S. Bruyère; David Roy 001; Thomas Skotnicki; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2003)

New insights into the change of voltage acceleration and temperature activation of oxide breakdown. - G. Ribes; S. Bruyère; Frederic Monsieur; David Roy 001; Vincent Huard (Microelectron. Reliab., 2003)

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. - G. Ribes; S. Bruyère; Mickael Denais; Frederic Monsieur; Vincent Huard; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

Degradation mechanism understanding of NLDEMOS SOI in RF applications. - D. Lachenal; Alain Bravaix; Frederic Monsieur; Yannick Rey-Tauriac (Microelectron. Reliab., 2007)

Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. - Malick Diop; Nathalie Revil; M. Marin; Frederic Monsieur; Pascal Chevalier 002; Gérard Ghibaudo (Microelectron. Reliab., 2008)

High voltage devices in advanced CMOS technologies. - Raúl Andrés Bianchi; Christine Raynaud; Floria Blanchet; Frederic Monsieur; Olivier Noblanc (CICC, 2009)

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. - Frederic Monsieur; Yvan Denis; Denis Rideau; Vincent Quenette; Gilles Gouget; Clément Tavernier; Hervé Jaouen; Gérard Ghibaudo; Joris Lacord (ESSDERC, 2014)

Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs. - Giacomo Garegnani; Vincent Fiori; Gilles Gouget; Frederic Monsieur; Clément Tavernier (Microelectron. Reliab., 2016)

Simulation of the thermal stress induced by CW 1340 nm laser on 28 nm advanced technologies. - Maxime Penzes; S. Dudit; Frederic Monsieur; Luca Silvestri; F. Nallet; D. Lewis; P. Perdu (Microelectron. Reliab., 2017)

40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications. - S. Crémer; N. Pelloux; F. Gianesello; Y. Mourier; G. Haury; Tulio Chaves de Albuquerque; Frederic Monsieur; H. Audouin; C. A. Legrand; C. Diouf; J. Azevedo Goncalves; C. Belem Goncalves; et al. (ESSDERC, 2023)

Insight Into HCI Reliability on I/O Nitrided Devices. - C. Doyen; V. Yon; Xavier Garros; Luigi Basset; Tadeu Mota Frutuoso; C. Dagon; Cheikh Diouf; X. Federspiel; V. Millon; Frederic Monsieur; C. Pribat; David Roy 001 (IRPS, 2023)

Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. - Tidjani Garba-Seybou; Xavier Federspiel; Frederic Monsieur; Mathieu Sicre; Florian Cacho; Joycelyn Hai; Alain Bravaix (IRPS, 2023)

A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications. - Pascal Chevalier 002; Florian Cacho; C. Durand; N. Derrier; V. Millon; Frederic Monsieur; A. Gauthier; P. Billy; Sébastien Fregonese; Thomas Zimmer; H. Audouin; Michel Buczko; et al. (BCICTS, 2024)