Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates. - Fritz Berkmann; Lion Augel; M. B. Schilling; Audrey Berrier; Daniel Schwarz; David Weißhaupt; Michael Oehme; Jörg Schulze; Inga A. Fischer (MIPRO, 2018)

Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers. - Marco M. Dettling; David Weißhaupt; Hannes S. Funk; Michal Kern; Fritz Berkmann; Caterina J. Clausen; Michael Oehme; Daniel Schwarz; Joris van Slageren; Jörg Schulze (MIPRO, 2020)

Titanium and Nickel as alternative materials for mid Infrared Plasmonic. - Fritz Berkmann; M. Ayasse; F. Mörz; Inga A. Fischer; Jörg Schulze (MIPRO, 2021)

Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures. - Lukas Seidel; Daniel Schwarz; Michael Oehme; A. Causevic; Hannes S. Funk; David Weißhaupt; Fritz Berkmann; Jörg Schulze (MIPRO, 2021)

Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy. - E. Sigle; David Weißhaupt; Michael Oehme; Hannes S. Funk; Daniel Schwarz; Fritz Berkmann; Jörg Schulze (MIPRO, 2021)

Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si. - Yasmine Elogail; Fritz Berkmann; Caterina J. Clausen; Inga A. Fischer; Linda A. Hänel; Daniel Schwarz; Jörg Schulze (Microelectron. J., 2022)