A new art-based neural architecture for pattern classification and image enhancement without prior knowledge. - Frank Yeong-Chyang Shih; Jenlong Moh; Fu-Chun Chang (Pattern Recognit., 1992)

A 0.5V Real-Time Computational CMOS Image Sensor with Programmable Kernel for Always-On Feature Extraction. - Tzu-Hsiang Hsu; Yen-Kai Chen; Tai-Hsing Wen; Wei-Chen Wei; Yi-Ren Chen; Fu-Chun Chang; Ren-Shuo Liu; Chung-Chuan Lo; Kea-Tiong Tang; Meng-Fan Chang; Chih-Cheng Hsieh (A-SSCC, 2019)

A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices. - Cheng-Xin Xue; Je-Min Hung; Hui-Yao Kao; Yen-Hsiang Huang; Sheng-Po Huang; Fu-Chun Chang; Peng Chen; Ta-Wei Liu; Chuan-Jia Jhang; Chin-I Su; Win-San Khwa; Chung-Chuan Lo; et al. (ISSCC, 2021)

Challenges and Trends of SRAM-Based Computing-In-Memory for AI Edge Devices. - Chuan-Jia Jhang; Cheng-Xin Xue; Je-Min Hung; Fu-Chun Chang; Meng-Fan Chang (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

A 22nm 4Mb STT-MRAM Data-Encrypted Near-Memory Computation Macro with a 192GB/s Read-and-Decryption Bandwidth and 25.1-55.1TOPS/W 8b MAC for AI Operations. - Yen-Cheng Chiu; Chia-Sheng Yang; Shih-Hsih Teng; Hsiao-Yu Huang; Fu-Chun Chang; Yuan Wu 009; Yu-An Chien; Fang-Ling Hsieh; Chung-Yuan Li; Guan-Yi Lin; Po-Jung Chen; Tsen-Hsiang Pan; et al. (ISSCC, 2022)

An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices. - Je-Min Hung; Yen-Hsiang Huang; Sheng-Po Huang; Fu-Chun Chang; Tai-Hao Wen; Chin-I Su; Win-San Khwa; Chung-Chuan Lo; Ren-Shuo Liu; Chih-Cheng Hsieh; Kea-Tiong Tang; Yu-Der Chih; et al. (ISSCC, 2022)

A 40-nm, 2M-Cell, 8b-Precision, Hybrid SLC-MLC PCM Computing-in-Memory Macro with 20.5 - 65.0TOPS/W for Tiny-Al Edge Devices. - Win-San Khwa; Yen-Cheng Chiu; Chuan-Jia Jhang; Sheng-Po Huang; Chun-Ying Lee; Tai-Hao Wen; Fu-Chun Chang; Shao-Ming Yu; Tung-Yin Lee; Meng-Fan Chang (ISSCC, 2022)

A 28nm 1Mb Time-Domain Computing-in-Memory 6T-SRAM Macro with a 6.6ns Latency, 1241GOPS and 37.01TOPS/W for 8b-MAC Operations for Edge-AI Devices. - Ping-Chun Wu; Jian-Wei Su; Yen-Lin Chung; Li-Yang Hong; Jin-Sheng Ren; Fu-Chun Chang; Yuan Wu 009; Ho-Yu Chen; Chen-Hsun Lin; Hsu-Ming Hsiao; Sih-Han Li; Shyh-Shyuan Sheu; et al. (ISSCC, 2022)

Efficient token circulation strategies against misers in device-to-device relay using token-based incentive mechanisms. - You-Chiun Wang; Fu-Chun Chang (IET Commun., 2022)

Two-Way Transpose Multibit 6T SRAM Computing-in-Memory Macro for Inference-Training AI Edge Chips. - Jian-Wei Su; Xin Si; Yen-Chi Chou; Ting-Wei Chang; Wei-Hsing Huang; Yung-Ning Tu; Ruhui Liu; Pei-Jung Lu; Ta-Wei Liu; Jing-Hong Wang; Yen-Lin Chung; Jin-Sheng Ren; et al. (IEEE J. Solid State Circuits, 2022)

A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices. - Tai-Hao Wen; Je-Min Hung; Hung-Hsi Hsu; Yuan Wu 009; Fu-Chun Chang; Chung-Yuan Li; Chih-Han Chien; Chin-I Su; Win-San Khwa; Jui-Jen Wu; Chung-Chuan Lo; Ren-Shuo Liu; et al. (VLSI Technology and Circuits, 2023)

8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices. - Je-Min Hung; Tai-Hao Wen; Yen-Hsiang Huang; Sheng-Po Huang; Fu-Chun Chang; Chin-I Su; Win-San Khwa; Chung-Chuan Lo; Ren-Shuo Liu; Chih-Cheng Hsieh; Kea-Tiong Tang; Yu-Der Chih; et al. (IEEE J. Solid State Circuits, 2023)

An 8b-Precision 6T SRAM Computing-in-Memory Macro Using Time-Domain Incremental Accumulation for AI Edge Chips. - Ping-Chun Wu; Jian-Wei Su; Yen-Lin Chung; Li-Yang Hong; Jin-Sheng Ren; Fu-Chun Chang; Yuan Wu 009; Ho-Yu Chen; Chen-Hsun Lin; Hsu-Ming Hsiao; Sih-Han Li; Shyh-Shyuan Sheu; et al. (IEEE J. Solid State Circuits, 2024)