A 3.3-V 12-ns 16-Mb CMOS SRAM. - Hiroyuki Goto; Hiroaki Ohkubo; Kenji Kondou; Masayoshi Ohkawa; Hitoshi Mitani; Shinichi Horiba; Masakazu Soeda; Fumihiko Hayashi; Yutaro Hachiya; Toshiyuki Shimizu; Manabu Ando; Zensuke Matsuda (IEEE J. Solid State Circuits, 1992)

Reliability driven guideline for BEOL Optimization: Protecting MOS stacks from hydrogen-related impurity penetration. - Ziyuan Liu; Fumihiko Hayashi; Shinji Fujieda; Markus Wilde; Katsuyuki Fukutani (ICICDT, 2012)