Proposal and analysis of gate drive circuit suitable for GaN-FET. - Fumiya Hattori; Masayoshi Yamamoto (IECON, 2012)

Multi-resonant gate drive circuit of isolating-gate GaN HEMTs for tens of MHz. - Fumiya Hattori; Hirokatsu Umegami; Masayoshi Yamamoto (IET Circuits Devices Syst., 2017)

Gate Drive Circuit Suitable for a GaN Gate Injection Transistor. - Fumiya Hattori; Yuta Yanagisawa; Jun Imaoka; Masayoshi Yamamoto (IEEE Access, 2023)