Mitigating Line-Break Defectivity with a Sandwiched TiN or W Layer for Metal Pitch 18 NM Aspect Ratio 6 Semi-Damascene Interconnects. - Anshul Gupta; Shreya Kundu; Stefan Decoster; K. Sah; G. Delie; B. Truijen; Davide Tierno; Giulio Marti; O. Varela Pedreira; B. Kenens; Y. Hermans; C. Adelmann; et al. (VLSI Technology and Circuits, 2024)

Leakage and TDDB Mechanisms in 18 nm Pitch Direct Metal Etch Ru Interconnects with Airgaps. - Alicja Lesniewska; Y. Fang; G. Delie; Philippe Roussel; Koen Van Sever; Emmanuel Chery; O. Varela Pedreira; Ivan Ciofi; S. H. Park; Zsolt Tokei; Kris Croes (IRPS, 2025)