Impact of the As dose in 0.35 mum EEPROM technology: characterization and modeling. - N. Galbiati; G. Ghidini; C. Cremonesi; Luca Larcher (Microelectron. Reliab., 2001)

Evaluation methodology of thin dielectrics for non-volatile memory application. - G. Ghidini; D. Brazzelli (Microelectron. Reliab., 2002)

Ionising radiation effects on MOSFET drain current. - S. Cimino; Andrea Cester; Alessandro Paccagnella; G. Ghidini (Microelectron. Reliab., 2003)

Anomalous gate oxide conduction on isolation edges: analysis and process optimization. - Andrea Ghetti; D. Brazzelli; A. Benvenuti; G. Ghidini; Alessia Pavan (Microelectron. Reliab., 2003)

Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET. - G. Ghidini; A. Garavaglia; G. Giusto; Andrea Ghetti; R. Bottini; D. Peschiaroli; M. Scaravaggi; F. Cazzaniga; Daniele Ielmini (Microelectron. Reliab., 2003)

Tunnel oxide degradation under pulsed stress. - G. Ghidini; C. Capolupo; G. Giusto; A. Sebastiani; B. Stragliati; Maria Elena Vitali (Microelectron. Reliab., 2005)

Impact of interface and bulk trapped charges on transistor reliability. - G. Ghidini; M. Langenbuch; R. Bottini; D. Brazzelli; Andrea Ghetti; N. Galbiati; G. Giusto; A. Garavaglia (Microelectron. Reliab., 2005)

In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability. - M. Langenbuch; R. Bottini; Maria Elena Vitali; G. Ghidini (Microelectron. Reliab., 2005)

Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress. - Simone Gerardin; Alessio Griffoni; Andrea Cester; Alessandro Paccagnella; G. Ghidini (Microelectron. Reliab., 2006)

Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs. - Javier Martín-Martínez; Simone Gerardin; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Andrea Cester; Alessandro Paccagnella; G. Ghidini (Microelectron. Reliab., 2007)

High-K dielectrics for inter-poly application in non volatile memories. - A. Sebastiani; R. Piagge; Alberto Modelli; G. Ghidini (Microelectron. Reliab., 2007)

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale. - Mario Lanza; Marc Porti; Montserrat Nafría; Xavier Aymerich; G. Ghidini; A. Sebastiani (Microelectron. Reliab., 2009)

Charge-related phenomena and reliability of non-volatile memories. - G. Ghidini (Microelectron. Reliab., 2012)