Stress induced leakage current at low field in ultra thin oxides. - François Lime; Gérard Ghibaudo; G. Guégan (Microelectron. Reliab., 2001)

Origin of hot carrier degradation in advanced nMOSFET devices. - B. Cretu; Francis Balestra; Gérard Ghibaudo; G. Guégan (Microelectron. Reliab., 2002)

Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. - M. Fadlallah; Gérard Ghibaudo; Jalal Jomaah; M. Zoaeter; G. Guégan (Microelectron. Reliab., 2002)