Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). - Raphael Clerc; Alessandro S. Spinelli; Gérard Ghibaudo; Charles Leroux; G. Pananakakis (Microelectron. Reliab., 2001)

Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. - Frederic Monsieur; E. Vincent; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. - Frederic Monsieur; E. Vincent; David Roy 001; S. Bruyère; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Gate oxide Reliability assessment optimization. - Frederic Monsieur; E. Vincent; David Roy 001; S. Bruyère; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2002)

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. - Frederic Monsieur; E. Vincent; Vincent Huard; S. Bruyère; David Roy 001; Thomas Skotnicki; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2003)

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. - Quentin Hubert; Carine Jahan; Alain Toffoli; Gabriele Navarro; S. Chandrashekar; Pierre Noe; Veronique Sousa; Luca Perniola; J.-F. Nodin; A. Persico; S. Maitrejean; A. Roule; et al. (ESSDERC, 2012)