Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. - Peter Lagger; S. Donsa; P. Spreitzer; Gregor Pobegen; M. Reiner; H. Naharashi; J. Mohamed; H. Mosslacher; G. Prechtl; Dionyz Pogany; Clemens Ostermaier (IRPS, 2015)

Exploring the thermal limit of GaN power devices under extreme overload conditions. - Florian Peter Pribahsnik; Michael Nelhiebel; M. Mataln; Mirko Bernardoni; G. Prechtl; Frank Altmann; David Poppitz; A. Lindemann (Microelectron. Reliab., 2017)