New insights into the change of voltage acceleration and temperature activation of oxide breakdown. - G. Ribes; S. Bruyère; Frederic Monsieur; David Roy 001; Vincent Huard (Microelectron. Reliab., 2003)

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. - G. Ribes; S. Bruyère; Mickael Denais; Frederic Monsieur; Vincent Huard; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. - G. Ribes; S. Bruyère; Mickael Denais; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

Designing in reliability in advanced CMOS technologies. - C. R. Parthasarathy; Mickael Denais; Vincent Huard; G. Ribes; David Roy 001; Chloe Guérin; F. Perrier; E. Vincent; Alain Bravaix (Microelectron. Reliab., 2006)

Oxide Soft Breakdown : From device modeling to small circuit simulation. - L. Gerrer; Gérard Ghibaudo; G. Ribes (ESSCIRC, 2009)

Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. - L. Gerrer; M. Rafik; G. Ribes; Gérard Ghibaudo; E. Vincent (Microelectron. Reliab., 2010)

Plasma induced damage investigation in the fully depleted SOI technology. - M. Akbal; G. Ribes; M. Guillermet; L. Vallier (ICICDT, 2015)

New insight in plasma charging impact on gate oxide breakdown in FDSOI technology. - M. Akbal; G. Ribes; L. Vallier (IRPS, 2015)