Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. - G. S. Lujan; Wim Magnus; L.-Å. Ragnarsson; Stefan Kubicek; Stefan De Gendt; Marc M. Heyns; Kristin De Meyer (Microelectron. Reliab., 2005)

Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors. - Tom Schram; L.-Å. Ragnarsson; G. S. Lujan; W. Deweerd; J. Chen; W. Tsai; K. Henson; R. J. P. Lander; J. C. Hooker; J. Vertommen (Microelectron. Reliab., 2005)