Epitaxial growth of LaAlO3 on Si(0 0 1) using interface engineering. - Clement Merckling; G. Delhaye; Mario El Kazzi; S. Gaillard; Yoann Rozier; L. Rapenne; B. Chenevier; O. Marty; G. Saint-Girons; M. Gendry; Y. Robach; Guy Hollinger (Microelectron. Reliab., 2007)