Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics. - Stephan Abermann; J. K. Efavi; G. Sjöblom; Max Christian Lemme; Jörgen Olsson; Emmerich Bertagnolli (Microelectron. Reliab., 2007)