A study of an abnormal ESD failure mechanism and threshold voltage caused by ESD current zapping sequence. - Yong-Ha Song; Choong-Kyun Kim; Moo-Young Park; Bum-Suk Kye; Jeongil Seo; Dong-Soo Cho; Taek-Soo Kim; Gab-soo Han (Microelectron. Reliab., 2004)

A 14b extended counting ADC implemented in a 24Mpixel APS-C CMOS image sensor. - Jae-Hong Kim; Wun-ki Jung; Seung-hyun Lim; Yu-jin Park; Won-Ho Choi; Yun-Jung Kim; Chang-eun Kang; Jihun Shin; Kyojin Choo; Won-baek Lee; Jin-kyeong Heo; Byung-jo Kim; et al. (ISSCC, 2012)

7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate. - JungChak Ahn; Kyungho Lee; Yitae Kim; Heegeun Jeong; Bumsuk Kim; Hongki Kim; Jongeun Park; Taesub Jung; Wonje Park; Taeheon Lee; Eunkyung Park 003; Sangjun Choi; et al. (ISSCC, 2014)