On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories. - Elisa Vianello; Carlo Cagli; Gabriel Molas; Emeline Souchier; Philippe Blaise; Catherine Carabasse; G. Rodriguez; V. Jousseaume; Barbara De Salvo; Florian Longnos; Faiz Dahmani; P. Verrier; et al. (ESSDERC, 2012)

A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications. - Giorgio Palma; Elisa Vianello; Olivier Thomas; Houcine Oucheikh; Santhosh Onkaraiah; Alain Toffoli; Catherine Carabasse; Gabriel Molas; Barbara De Salvo (ESSDERC, 2013)

On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. - Boubacar Traore; Elisa Vianello; Gabriel Molas; Marc Gely; Jean-François Nodin; Eric Jalaguier; Philippe Blaise; Barbara De Salvo; Leonardo R. C. Fonseca; Kanhao Xue; Yoshio Nishi (ESSDERC, 2013)

Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design. - Elisa Vianello; Olivier Thomas; M. Harrand; Santhosh Onkaraiah; T. Cabout; Boubacar Traore; T. Diokh; Houcine Oucheikh; Luca Perniola; Gabriel Molas; Philippe Blaise; J.-F. Nodin; et al. (ICICDT, 2013)

Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications. - Gilbert Sassine; Cecile Nail; Luc Tillie; Diego Alfaro Robayo; Alexandre Levisse; Carlo Cagli; Khalil El Hajjam; Jean-Francois Nodin; Elisa Vianello; Mathieu Bernard; Gabriel Molas; Etienne Nowak (IRPS, 2018)

Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays. - Mouhamad Alayan; Eloi Muhr; Alexandre Levisse; Marc Bocquet; Mathieu Moreau; Etienne Nowak; Gabriel Molas; Elisa Vianello; Jean-Michel Portal (IEEE Trans. Circuits Syst. II Express Briefs, 2019)

Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device. - Amir Regev; Alessandro Bricalli; Giuseppe Piccolboni; Alexandre Valentian; Thomas Mesquida; Gabriel Molas; Jean-François Nodin (AICAS, 2020)

Write Termination Circuits for RRAM: A Holistic Approach From Technology to Application Considerations. - Alexandre Levisse; Marc Bocquet; Marco Rios; Mouhamad Alayan; Mathieu Moreau; Etienne Nowak; Gabriel Molas; Elisa Vianello; David Atienza; Jean-Michel Portal (IEEE Access, 2020)

A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification. - Wolfgang Goes; D. Green; Philippe Blaise; Giuseppe Piccolboni; Alessandro Bricalli; Amir Regev; Gabriel Molas; Jean-Francois Nodin (IMW, 2021)

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. - Laurent Grenouillet; Niccolo Castellani; Alain Persico; Valentina Meli; Simon Martin 006; Olivier Billoint; R. Segaud; Stefania Bernasconi; C. Pellissier; Carine Jahan; Christelle Charpin-Nicolle; P. Dezest; et al. (IMW, 2021)

Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays. - Joel Minguet Lopez; Niccolo Castellani; Laurent Grenouillet; Lucas Reganaz; Gabriele Navarro; Mathieu Bernard; Catherine Carabasse; Thomas Magis; Damien Deleruyelle; Marc Bocquet; Jean-Michel Portal; Etienne Nowak; et al. (IMW, 2021)

Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization. - Joel Minguet Lopez; Lucas Hudeley; Laurent Grenouillet; Diego Alfaro Robayo; Jury Sandrini; Gabriele Navarro; Mathieu Bernard; Catherine Carabasse; Damien Deleruyelle; Niccolo Castellani; Marc Bocquet; Jean-Michel Portal; et al. (IRPS, 2021)

1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing. - Joel Minguet Lopez; François Rummens; Lucas Reganaz; A. Heraud; Tifenn Hirtzlin; Laurent Grenouillet; Gabriele Navarro; Mathieu Bernard; Catherine Carabasse; Niccolo Castellani; Valentina Meli; S. Martin; et al. (IMW, 2022)

High temperature stability embedded ReRAM for 2x nm node and beyond. - Gabriel Molas; Giuseppe Piccolboni; Alessandro Bricalli; Anthonin Verdy; I. Naot; Y. Cohen; Amir Regev; I. Naveh; Damien Deleruyelle; Quentin Rafhay; Niccolo Castellani; Lucas Reganaz; et al. (IMW, 2022)

Hardware calibrated learning to compensate heterogeneity in analog RRAM-based Spiking Neural Networks. - Filippo Moro; Eduardo Esmanhotto; Tifenn Hirtzlin; Niccolo Castellani; Ahmed Trabelsi; Thomas Dalgaty; Gabriel Molas; François Andrieu; Stefano Brivio; Sabina Spiga; Giacomo Indiveri; Melika Payvand; et al. (ISCAS, 2022)

A High Throughput Generative Vector Autoregression Model for Stochastic Synapses. - Tyler Hennen; A. Elias; Jean-Francois Nodin; Gabriel Molas; Rainer Waser; Dirk J. Wouters; Daniel Bedau (CoRR, 2022)

Benefits of Design Assist Techniques on Performances and Reliability of a RRAM Macro. - Bastien Giraud; Sebastien Ricavy; Yasser Moursy; Cyrille Laffond; Ilan Sever; Valentin Gherman; Manuel Pezzin; Florent Lepin; Mariam Diallo; Khadija Zenati; Sylvain Dumas; Maxim Vershkov; et al. (IMW, 2023)

Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability. - Lucas Reganaz; Damien Deleruyelle; Quentin Rafhay; Joel Minguet Lopez; Niccolo Castellani; Jean-François Nodin; Alessandro Bricalli; Giuseppe Piccolboni; Gabriel Molas; François Andrieu (IRPS, 2023)

1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation. - Joel Minguet Lopez; Manon Dampfhoffer; Tifenn Hirtzlin; Lucas Reganaz; Laurent Grenouillet; Gabriele Navarro; Mathieu Bernard; Thomas Magis; Catherine Carabasse; Niccolo Castellani; Valentina Meli; Elisa Vianello; et al. (MIXDES, 2023)

Fully Binarized, Parallel, RRAM-Based Computing Primitive for In-Memory Similarity Search. - Sandeep Kaur Kingra; Vivek Parmar; Deepak Verma; Alessandro Bricalli; Giuseppe Piccolboni; Gabriel Molas; Amir Regev; Manan Suri (IEEE Trans. Circuits Syst. II Express Briefs, 2023)

Optimizing RRAM Performance: A Comparative Analysis of Forming Strategies. - Thomas Bauvent; Gaël Pillonnet; Gabriel Molas (IMW, 2024)

Experimental Demonstration of Non-Stateful In-Memory Logic With 1T1R OxRAM Valence Change Mechanism Memristors. - Henriette Padberg; Amir Regev; Giuseppe Piccolboni; Alessandro Bricalli; Gabriel Molas; Jean-Francois Nodin; Shahar Kvatinsky (IEEE Trans. Circuits Syst. II Express Briefs, 2024)

Smart Write Algorithm to Enhance Performances and Reliability of an RRAM Macro. - Bastien Giraud; Sebastien Ricavy; Cyrille Laffond; Ilan Sever; Valentin Gherman; Florent Lepin; Mariam Diallo; Khadija Zenati; Sylvain Dumas; Olivier Guille; Maxim Vershkov; Alessandro Bricalli; et al. (IEEE J. Solid State Circuits, 2024)

Relaxation-Aware Programming in RRAM: Evaluating and Optimizing Write Termination. - M. Correa Cueto; Bastien Giraud; M. Drouard; Giuseppe Piccolboni; Gabriel Molas; Gaël Pillonnet (IMW, 2025)

Improving Error Correction with Weak-Bit Information in Resistive Memories. - Valentin Gherman; Giuseppe Piccolboni; Zeev Freidin; Matan Guttman; Amir Regev; Gabriel Molas; Ishai Naveh; Bastien Giraud; Antoine Hebert; Ilan Sever (IOLTS, 2025)