Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application. - Mingcheng Chang; Nigel Chan; Vivek Joshi; Sandra Hecker; Udo Ziller; Petra Poth; Alban Zaka; Tom Herrmann; Seunghwan Seo; Hongsik Yoon; Xin Zou; Zhen Xu; et al. (ESSDERC, 2018)

From Emergence to Prevalence: 22FDX® Embedded STT-MRAM. - Johannes Müller; Aleksandra Titova; Hongsik Yoon; Thomas Merbeth; Martin Weisheit; Georg Wolf; Sanjeeb Bharali; Bert Pfefferling; Yuichi Otani; Tetyana Shapoval; Alberto Cagliani; Ferenc Vajda; et al. (IMW, 2022)